GeneSiC Semiconductor MBR60045CT
- Part Number:
- MBR60045CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2823356-MBR60045CT
- Description:
- DIODE MODULE 45V 300A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR60045CT
GeneSiC Semiconductor MBR60045CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR60045CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr1mA @ 20V
- Voltage - Forward (Vf) (Max) @ If750mV @ 300A
- Forward Current600A
- Max Reverse Leakage Current1μA
- Max Surge Current4kA
- Output Current-Max300A
- ApplicationPOWER
- Current - Average Rectified (Io)300A
- Max Reverse Voltage (DC)45V
- Average Rectified Current600A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)45V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR60045CT Overview
There is a maximum output voltage of 300A.As a general rule, surge currents should be monitored and kept below 4kA.In operation, this device will be set to 600A volts forward.This device is powered with reverse voltage peak of 1A V.When it's reverse biased, it's maximal reverse leakage current is 1μA.
MBR60045CT Features
a maximum output voltage of 300A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR60045CT Applications
There are a lot of GeneSiC Semiconductor
MBR60045CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
There is a maximum output voltage of 300A.As a general rule, surge currents should be monitored and kept below 4kA.In operation, this device will be set to 600A volts forward.This device is powered with reverse voltage peak of 1A V.When it's reverse biased, it's maximal reverse leakage current is 1μA.
MBR60045CT Features
a maximum output voltage of 300A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR60045CT Applications
There are a lot of GeneSiC Semiconductor
MBR60045CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR60045CT More Descriptions
45V 600A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 600A 45P/32R
Schottky Rectifier, Common Cathode, 45V, 600A, 2-Tower; Repetitive Peak Reverse Voltage:45V; Average Forward Current:600A; Forward Voltage Max:750Mv; Diode Module Configuration:1 Pair Common Cathode; Diode Case Style:Twin Tower Rohs Compliant: Yes |Genesic Semiconductor MBR60045CT
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 600A 45P/32R
Schottky Rectifier, Common Cathode, 45V, 600A, 2-Tower; Repetitive Peak Reverse Voltage:45V; Average Forward Current:600A; Forward Voltage Max:750Mv; Diode Module Configuration:1 Pair Common Cathode; Diode Case Style:Twin Tower Rohs Compliant: Yes |Genesic Semiconductor MBR60045CT
The three parts on the right have similar specifications to MBR60045CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusOperating Temperature (Max)Element ConfigurationOperating Temperature - JunctionNon-rep Pk Forward Current-MaxReverse Current-MaxView Compare
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MBR60045CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk2013yesActive1 (Unlimited)2EAR99150°C-40°C8541.10.00.80UPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDR-PUFM-X22Fast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 20V750mV @ 300A600A1μA4kA300APOWER300A45V600A11A45V1 Pair Common CathodeRoHS Compliant------ -
PRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk-yesActive1 (Unlimited)2EAR99--8541.10.00.80UPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDR-PUFM-X22Fast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 150V880mV @ 300A----POWER-150V300A1--1 Pair Common CathodeRoHS Compliant150°CCommon Cathode-55°C~150°C4000A3000μA
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--Chassis MountChassis MountTwin TowerSILICONBulk--Obsolete1 (Unlimited)2EAR99--8541.10.00.80UPPERUNSPECIFIED--R-PUFM-X22Fast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 45V600mV @ 300A----POWER-45V300A1--1 Pair Common AnodeRoHS Compliant150°CCommon Anode-55°C~150°C4000A5000μA
-
PRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk2013yesActive1 (Unlimited)2-150°C-40°C-UPPERUNSPECIFIED--R-PUFM-X22Fast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 20V800mV @ 300A600A1μA4kA300APOWER300A60V600A11A60V1 Pair Common CathodeRoHS Compliant-Common Cathode-50°C~150°C--
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