MBR50080CTR

GeneSiC Semiconductor MBR50080CTR

Part Number:
MBR50080CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2420198-MBR50080CTR
Description:
DIODE MODULE 80V 500A 2TOWER
ECAD Model:
Datasheet:
MBR50080CTR

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
GeneSiC Semiconductor MBR50080CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR50080CTR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    1mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    880mV @ 250A
  • Forward Current
    500A
  • Max Reverse Leakage Current
    1μA
  • Max Surge Current
    3.5kA
  • Output Current-Max
    250A
  • Application
    POWER
  • Current - Average Rectified (Io)
    500A DC
  • Max Reverse Voltage (DC)
    80V
  • Average Rectified Current
    500A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    80V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MBR50080CTR Overview
The maximum output voltage can be set to 250A.A surge current should be monitored and should not exceed 3.5kA.As long as the forward voltage is set to 500A, the device will operate.There is a reverse voltage peak of 1A on devices like this one.When reverse biased, its maximum reverse leakage current is 1μA, which is the current coming from that semiconductor device.

MBR50080CTR Features
a maximum output voltage of 250A
a peak voltage of 1A
a reverse voltage peak of 1A


MBR50080CTR Applications
There are a lot of GeneSiC Semiconductor
MBR50080CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR50080CTR More Descriptions
80 V 500 A Twin Tower Silicon Schottky Rectifier
DIODE MODULE 80V 500A 2TOWER
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.