GeneSiC Semiconductor MBR300200CT
- Part Number:
- MBR300200CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2420101-MBR300200CT
- Description:
- DIODE SCHOTTKY 200V 150A 2 TOWER
- ECAD Model:
-
- Datasheet:
- MBR300200CT
GeneSiC Semiconductor MBR300200CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR300200CT.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Operating Temperature (Max)150°C
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr3mA @ 200V
- Voltage - Forward (Vf) (Max) @ If920mV @ 150A
- Operating Temperature - Junction-40°C~150°C
- ApplicationPOWER
- Max Reverse Voltage (DC)200V
- Average Rectified Current150A
- Number of Phases1
- Non-rep Pk Forward Current-Max2000A
- Diode Configuration1 Pair Common Cathode
- Reverse Current-Max3000μA
- RoHS StatusRoHS Compliant
MBR300200CT Overview
The forward voltage should be monitored and should never exceed 3000μA.
MBR300200CT Features
a forward voltage of 3000μA
a forward voltage of 3000μA
MBR300200CT Applications
There are a lot of GeneSiC Semiconductor
MBR300200CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
The forward voltage should be monitored and should never exceed 3000μA.
MBR300200CT Features
a forward voltage of 3000μA
a forward voltage of 3000μA
MBR300200CT Applications
There are a lot of GeneSiC Semiconductor
MBR300200CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR300200CT More Descriptions
200V 300A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
DIODE SCHOTTKY 200V 150A 2 TOWER
DIODE MOD SCHOT 200V 150A 2TOWER
Schottky Rectifier, Module, 300A, 200V; Repetitive Peak Reverse Voltage:200V; Average Forward Current:300A; Forward Voltage Max:920Mv; Diode Module Configuration:Dual Common Cathode; Diode Case Style:Twin Tower; No. Of Pins:3Pins Rohs Compliant: Yes |Genesic Semiconductor MBR300200CT
DIODE SCHOTTKY 200V 150A 2 TOWER
DIODE MOD SCHOT 200V 150A 2TOWER
Schottky Rectifier, Module, 300A, 200V; Repetitive Peak Reverse Voltage:200V; Average Forward Current:300A; Forward Voltage Max:920Mv; Diode Module Configuration:Dual Common Cathode; Diode Case Style:Twin Tower; No. Of Pins:3Pins Rohs Compliant: Yes |Genesic Semiconductor MBR300200CT
The three parts on the right have similar specifications to MBR300200CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTerminal PositionTerminal FormJESD-30 CodeOperating Temperature (Max)Number of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating Temperature - JunctionApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesNon-rep Pk Forward Current-MaxDiode ConfigurationReverse Current-MaxRoHS StatusVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):Number of PinsSupplier Device PackageSeriesPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingBase Part NumberForward CurrentMax Reverse Leakage CurrentMax Surge CurrentVoltage - DC Reverse (Vr) (Max)Breakdown VoltageCurrent - Average Rectified (Io)Forward VoltagePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthREACH SVHCLead FreeWeightJESD-609 CodeTerminal FinishAdditional FeatureSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountRadiation HardeningView Compare
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MBR300200CTPRODUCTION (Last Updated: 5 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulkyesActive1 (Unlimited)2EAR998541.10.00.80UPPERUNSPECIFIEDR-PUFM-X2150°C2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky3mA @ 200V920mV @ 150A-40°C~150°CPOWER200V150A12000A1 Pair Common Cathode3000μARoHS Compliant------------------------------------------------ -
--------------------------------760mV @ 30A45VTO-3PFast Recovery = 200mA (Io)-TubeTO-3P-3, SC-65-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode1mA @ 45V30A----------------------------------
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LAST SHIPMENTS (Last Updated: 2 days ago)-Through HoleThrough HoleTO-218-3-Tube-Obsolete1 (Unlimited)--------Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 45V600mV @ 20A-65°C~175°C-45V15A--1 Pair Common Cathode-RoHS Compliant-------------3SOT-93SWITCHMODE™2006175°C-65°C45V15AMBR3045PT30A1mA200A45V45V15A760mV1mA45V200A200A20.3454mm15.2146mm4.9022mmNo SVHCLead Free---------
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-16 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-3SILICONTubenoActive1 (Unlimited)3EAR998541.10.00.80SINGLE---2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 30V760mV @ 30A-65°C~150°CEFFICIENCY30V30A1-1 Pair Common Cathode-ROHS3 Compliant-------------3--2005150°C-65°C---30A-----760mV1mA30V200A200A22.38mm16.25mm5.36mm--6.756003ge3Matte Tin (Sn)LOW POWER LOSS, FREE WHEELING DIODERectifier Diodes260403No
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