MBR20045CT

GeneSiC Semiconductor MBR20045CT

Part Number:
MBR20045CT
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2419969-MBR20045CT
Description:
DIODE MODULE 45V 200A 2TOWER
ECAD Model:
Datasheet:
MBR20045CT

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Specifications
GeneSiC Semiconductor MBR20045CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR20045CT.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2012
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -40°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    5mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    650mV @ 100A
  • Forward Current
    200A
  • Output Current-Max
    100A
  • Application
    POWER
  • Current - Average Rectified (Io)
    200A DC
  • Forward Voltage
    750mV
  • Max Reverse Voltage (DC)
    45V
  • Average Rectified Current
    200A
  • Number of Phases
    1
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    45V
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    1.5kA
  • RoHS Status
    RoHS Compliant
Description
MBR20045CT Overview
When the forward voltage is set to 750mV, this device will operate.Array is capable of supporting a maximum output voltage of 100A.When the forward voltage is set to 200A, this device will operate.Devices like this one are powered with a reverse voltage peak of 1μA.

MBR20045CT Features
750mV forward voltage
a maximum output voltage of 100A
a peak voltage of 1μA
a reverse voltage peak of 1μA


MBR20045CT Applications
There are a lot of GeneSiC Semiconductor
MBR20045CT applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR20045CT More Descriptions
45V 200A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers 45V 200A Schottky Recovery
DIODE MOD SCHOTT 45V 200A 2TOWER
Schottky Rectifier, Common Cathode, 45V, 200A, 2-Tower; Repetitive Peak Reverse Voltage:45V; Average Forward Current:200A; Forward Voltage Max:650Mv; Diode Module Configuration:1 Pair Common Cathode; Diode Case Style:Twin Tower Rohs Compliant: Yes |Genesic Semiconductor MBR20045CT
Product Comparison
The three parts on the right have similar specifications to MBR20045CT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Output Current-Max
    Application
    Current - Average Rectified (Io)
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Diode Configuration
    Max Forward Surge Current (Ifsm)
    RoHS Status
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Diode Configuration:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io) (per Diode):
    Number of Pins
    Weight
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Temperature - Junction
    JEDEC-95 Code
    Peak Non-Repetitive Surge Current
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • MBR20045CT
    MBR20045CT
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis Mount
    Chassis Mount
    Twin Tower
    SILICON
    Bulk
    2012
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -40°C
    8541.10.00.80
    UPPER
    UNSPECIFIED
    R-PUFM-X2
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    5mA @ 20V
    650mV @ 100A
    200A
    100A
    POWER
    200A DC
    750mV
    45V
    200A
    1
    1μA
    45V
    1 Pair Common Cathode
    1.5kA
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR2035CT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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    -
    -
    -
    840mV @ 20A
    35V
    TO-220-3
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-220-3
    -65°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    100µA @ 35V
    20A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MBR2030CT
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    Tube
    2005
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    150°C
    -65°C
    8541.10.00.80
    SINGLE
    -
    -
    2
    Common Cathode
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 30V
    840mV @ 20A
    20A
    -
    EFFICIENCY
    -
    840mV
    30V
    20A
    1
    100μA
    30V
    1 Pair Common Cathode
    150A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3
    6.000006g
    e3
    Matte Tin (Sn)
    LOW POWER LOSS, FREE WHEELING DIODE
    Rectifier Diodes
    260
    40
    MBR2030CT
    3
    -55°C~150°C
    TO-220AB
    150A
    8.89mm
    10.4mm
    4.82mm
    No
  • MBR2035CT
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    840mV @ 20A
    35V
    TO-220AB
    Fast Recovery = 200mA (Io)
    -
    Tube
    TO-220-3
    -55°C ~ 150°C
    Through Hole
    Schottky
    1 Pair Common Cathode
    100µA @ 35V
    20A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
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    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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