GeneSiC Semiconductor MBR20030CT
- Part Number:
- MBR20030CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419934-MBR20030CT
- Description:
- DIODE MODULE 30V 200A 2TOWER
- ECAD Model:
-
- Datasheet:
- MBR20030CT
GeneSiC Semiconductor MBR20030CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR20030CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Diode Element MaterialSILICON
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- JESD-30 CodeR-PUFM-X2
- Number of Elements2
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr5mA @ 20V
- Voltage - Forward (Vf) (Max) @ If650mV @ 100A
- Forward Current200A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current1.5kA
- Output Current-Max100A
- ApplicationPOWER
- Current - Average Rectified (Io)200A DC
- Max Reverse Voltage (DC)30V
- Average Rectified Current200A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)30V
- Diode Configuration1 Pair Common Cathode
- RoHS StatusRoHS Compliant
MBR20030CT Overview
Array is capable of supporting a maximum output voltage of 100A.Monarrayoring the surge current and preventing array from exceeding 1.5kA should be the rule.When the forward voltage is set to 200A, this device will operate.Devices like this one are powered with a reverse voltage peak of 1A.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.
MBR20030CT Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR20030CT Applications
There are a lot of GeneSiC Semiconductor
MBR20030CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
Array is capable of supporting a maximum output voltage of 100A.Monarrayoring the surge current and preventing array from exceeding 1.5kA should be the rule.When the forward voltage is set to 200A, this device will operate.Devices like this one are powered with a reverse voltage peak of 1A.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.
MBR20030CT Features
a maximum output voltage of 100A
a peak voltage of 1A
a reverse voltage peak of 1A
MBR20030CT Applications
There are a lot of GeneSiC Semiconductor
MBR20030CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MBR20030CT More Descriptions
30V 200A Twin Tower Silicon Rectifier Module - Schottky (Standard Configuration)
Schottky Diodes & Rectifiers 30V 200A Schottky Recovery
DIODE MOD SCHOTT 30V 200A 2TOWER
Schottky Diodes & Rectifiers 30V 200A Schottky Recovery
DIODE MOD SCHOTT 30V 200A 2TOWER
The three parts on the right have similar specifications to MBR20030CT.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Max Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Diode ConfigurationRoHS StatusAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)Element ConfigurationNon-rep Pk Forward Current-MaxReverse Current-MaxVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Diode Configuration:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io) (per Diode):View Compare
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MBR20030CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin TowerSILICONBulk2010yesActive1 (Unlimited)2EAR99175°C-40°C8541.10.00.80UPPERUNSPECIFIEDR-PUFM-X22Fast Recovery =< 500ns, > 200mA (Io)Schottky5mA @ 20V650mV @ 100A200A1μA-55°C~150°C1.5kA100APOWER200A DC30V200A11A30V1 Pair Common CathodeRoHS Compliant--------------------- -
-12 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AASILICONTape & Reel (TR)2017-Active1 (Unlimited)3EAR99--8541.10.00.80SINGLE-R-PSIP-T32Fast Recovery =< 500ns, > 200mA (Io)Schottky100μA @ 35V840mV @ 10A---65°C~150°C--GENERAL PURPOSE-35V10A1--1 Pair Common CathodeROHS3 CompliantFREE WHEELING DIODE26040150°CCommon Cathode150A100μA-------------
-
---------------------------------------------840mV @ 20A35VTO-220-3Fast Recovery = 200mA (Io)-TubeTO-220-3-65°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode100µA @ 35V20A
-
---------------------------------------------840mV @ 20A35VTO-220ABFast Recovery = 200mA (Io)-TubeTO-220-3-55°C ~ 150°CThrough HoleSchottky1 Pair Common Cathode100µA @ 35V20A
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