Micron Technology Inc. M58WR064KT70ZB6F TR
- Part Number:
- M58WR064KT70ZB6F TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3836425-M58WR064KT70ZB6F TR
- Description:
- IC FLASH 64MBIT 70NS 56VFBGA
- Datasheet:
- M58WR0xxKT,KB
Micron Technology Inc. M58WR064KT70ZB6F TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. M58WR064KT70ZB6F TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case56-VFBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~2V
- Base Part NumberM58WR064
- Memory Size64Mb 4M x 16
- Memory TypeNon-Volatile
- Clock Frequency66MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- Write Cycle Time - Word, Page70ns
- RoHS StatusROHS3 Compliant
M58WR064KT70ZB6F TR Overview
The operating temperature for this product is -40°C to 85°C. It was first published in 2011 and is currently still active. The product has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand up to 168 hours of exposure to moisture. It utilizes FLASH - NOR technology and has a voltage supply range of 1.7V to 2V. The memory type is non-volatile, meaning it retains data even when power is turned off. The clock frequency for this product is 66MHz and the write cycle time for both word and page is 70ns. It is also compliant with the RoHS3 standard.
M58WR064KT70ZB6F TR Features
Package / Case: 56-VFBGA
M58WR064KT70ZB6F TR Applications
There are a lot of Micron Technology Inc.
M58WR064KT70ZB6F TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The operating temperature for this product is -40°C to 85°C. It was first published in 2011 and is currently still active. The product has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand up to 168 hours of exposure to moisture. It utilizes FLASH - NOR technology and has a voltage supply range of 1.7V to 2V. The memory type is non-volatile, meaning it retains data even when power is turned off. The clock frequency for this product is 66MHz and the write cycle time for both word and page is 70ns. It is also compliant with the RoHS3 standard.
M58WR064KT70ZB6F TR Features
Package / Case: 56-VFBGA
M58WR064KT70ZB6F TR Applications
There are a lot of Micron Technology Inc.
M58WR064KT70ZB6F TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
M58WR064KT70ZB6F TR More Descriptions
IC FLASH 64MBIT PARALLEL 56VFBGA
LPDDR4 16G 1GX16 FBGA DDP
LPDDR4 16G 1GX16 FBGA DDP
The three parts on the right have similar specifications to M58WR064KT70ZB6F TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusMountNumber of PinsJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)InterfaceNominal Supply CurrentOrganizationMemory WidthAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)Sync/AsyncWord SizeData PollingToggle BitNumber of Sectors/SizeSector SizePage SizeBoot BlockHeight Seated (Max)LengthRadiation HardeningSurface MountVoltageAdditional FeatureReach Compliance CodeQualification StatusPower SuppliesOperating ModeSupply Current-MaxData Bus WidthMemory DensityProgramming VoltageCommand User InterfaceCommon Flash InterfaceView Compare
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M58WR064KT70ZB6F TR10 WeeksSurface Mount56-VFBGA-40°C~85°C TATape & Reel (TR)2011Active3 (168 Hours)FLASH - NOR1.7V~2VM58WR06464Mb 4M x 16Non-Volatile66MHzFLASHParallel70nsROHS3 Compliant---------------------------------------------------
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-Surface Mount56-VFBGA-40°C~85°C TATray2008Obsolete3 (168 Hours)FLASH - NOR1.7V~2VM58WR03232Mb 2M x 16Non-Volatile66MHzFLASHParallel70nsROHS3 CompliantSurface Mount56e1yes563A991.B.1.ATIN SILVER COPPER8542.32.00.51BOTTOM26011.8V0.75mm30561.8V2V1.7VParallel, Serial30mA2MX161621b32 Mb0.00005A70 nsAsynchronous16bNONO8634K32K4wordsBOTTOM1mm9mmNo-------------
-
-Surface Mount56-VFBGA-40°C~85°C TATray2011Obsolete3 (168 Hours)FLASH - NOR1.7V~2VM58WR06464Mb 4M x 16Non-Volatile66MHzFLASHParallel70nsROHS3 Compliant-56e1yes563A991.B.1.ATIN SILVER COPPER8542.32.00.51BOTTOM26011.8V0.75mm30561.8V--Parallel, Serial30mA4MX161622b64 Mb0.00005A70 nsAsynchronous16bNONO81274K32K4wordsBOTTOM1mm9mmNoYES1.7V-----------
-
-Surface Mount56-VFBGA-40°C~85°C TATape & Reel (TR)-Obsolete3 (168 Hours)FLASH - NOR1.65V~2.2VM58WR64Mb 4M x 16Non-Volatile66MHzFLASHParallel70nsROHS3 Compliant-56e0-563A991.B.1.ATin/Lead (Sn63Pb37)8542.32.00.51BOTTOM-11.8V0.75mm-56-2.2V1.7V--4MX1616--0.000005A70 ns--NONO81274K32K4wordsBOTTOM1mm9mm-YES-SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLEnot_compliantNot Qualified1.8/21.8/3VASYNCHRONOUS0.03mA16b67108864 bit1.8VYESYES
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