Microsemi Corporation JANTX2N3439
- Part Number:
- JANTX2N3439
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2846352-JANTX2N3439
- Description:
- TRANS NPN 350V 1A
- ECAD Model:
-
- Datasheet:
- JANTX2N3439
Microsemi Corporation JANTX2N3439 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3439.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/368
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation800mW
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA 10V
- Current - Collector Cutoff (Max)2μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Transition Frequency15MHz
- Collector Base Voltage (VCBO)450V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3439 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 20mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 15MHz.During maximum operation, collector current can be as low as 1A volts.
JANTX2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTX2N3439 Applications
There are a lot of Microsemi Corporation
JANTX2N3439 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 20mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 15MHz.During maximum operation, collector current can be as low as 1A volts.
JANTX2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JANTX2N3439 Applications
There are a lot of Microsemi Corporation
JANTX2N3439 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3439 More Descriptions
Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin
2N32XX Series NPN 350 V 1 A Through Hole Low Power Silicon Transistor - TO-39
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag
NPN LOW POWER SILICON TRANSISTOR | TRANS NPN 350V 1A
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3439
French Electronic Distributor since 1988
2N32XX Series NPN 350 V 1 A Through Hole Low Power Silicon Transistor - TO-39
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag
NPN LOW POWER SILICON TRANSISTOR | TRANS NPN 350V 1A
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3439
French Electronic Distributor since 1988
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