Microsemi Corporation JANTX2N1485
- Part Number:
- JANTX2N1485
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2464467-JANTX2N1485
- Description:
- TRANS NPN 40V 3A TO-8
- Datasheet:
- JANTX2N1485
Microsemi Corporation JANTX2N1485 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N1485.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-233AA, TO-8-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/180
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- Max Power Dissipation1.75W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count3
- Reference StandardMIL-S-19500/180D
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 750mA 4V
- Current - Collector Cutoff (Max)15μA ICBO
- Vce Saturation (Max) @ Ib, Ic750mV @ 40mA, 750mA
- Current - Collector (Ic) (Max)3A
- Transition Frequency1.25MHz
- Collector Base Voltage (VCBO)60V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N1485 Overview
In this device, the DC current gain is 35 @ 750mA 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 40mA, 750mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 1.25MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JANTX2N1485 Features
the DC current gain for this device is 35 @ 750mA 4V
the vce saturation(Max) is 750mV @ 40mA, 750mA
a transition frequency of 1.25MHz
JANTX2N1485 Applications
There are a lot of Microsemi Corporation
JANTX2N1485 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 35 @ 750mA 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 40mA, 750mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 1.25MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JANTX2N1485 Features
the DC current gain for this device is 35 @ 750mA 4V
the vce saturation(Max) is 750mV @ 40mA, 750mA
a transition frequency of 1.25MHz
JANTX2N1485 Applications
There are a lot of Microsemi Corporation
JANTX2N1485 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N1485 More Descriptions
Trans GP BJT NPN 40V 3A 1750mW 3-Pin TO-8 Tray
2N1485 Series NPN 40 V 3 A Silicon Medium Power Transistor - TO-8
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 3 A 1.75 W
2N1485 Series NPN 40 V 3 A Silicon Medium Power Transistor - TO-8
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 3 A 1.75 W
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