Microsemi Corporation JAN2N3772
- Part Number:
- JAN2N3772
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470646-JAN2N3772
- Description:
- TRANS NPN 60V 20A TO-3
- ECAD Model:
-
- Datasheet:
- JAN2N3772
Microsemi Corporation JAN2N3772 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3772.
- Factory Lead Time36 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/518
- Published2007
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation6W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current20A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10A 4V
- Current - Collector Cutoff (Max)5mA
- Vce Saturation (Max) @ Ib, Ic4V @ 4A, 20A
- Current - Collector (Ic) (Max)20A
- Transition Frequency0.2MHz
- Collector Base Voltage (VCBO)100V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N3772 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 10A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 4A, 20A.The part has a transition frequency of 0.2MHz.Single BJT transistor is possible to have a collector current as low as 20A volts at Single BJT transistors maximum.
JAN2N3772 Features
the DC current gain for this device is 15 @ 10A 4V
the vce saturation(Max) is 4V @ 4A, 20A
a transition frequency of 0.2MHz
JAN2N3772 Applications
There are a lot of Microsemi Corporation
JAN2N3772 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 10A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 4A, 20A.The part has a transition frequency of 0.2MHz.Single BJT transistor is possible to have a collector current as low as 20A volts at Single BJT transistors maximum.
JAN2N3772 Features
the DC current gain for this device is 15 @ 10A 4V
the vce saturation(Max) is 4V @ 4A, 20A
a transition frequency of 0.2MHz
JAN2N3772 Applications
There are a lot of Microsemi Corporation
JAN2N3772 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3772 More Descriptions
Trans GP BJT NPN 60V 20A 6000mW 3-Pin(2 Tab) TO-3 Tray
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 20 A
Power Bjt To-3 Rohs Compliant: Yes |Microchip JAN2N3772
French Electronic Distributor since 1988
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 20 A
Power Bjt To-3 Rohs Compliant: Yes |Microchip JAN2N3772
French Electronic Distributor since 1988
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