IXYS Integrated Circuits Division IXDD604SI
- Part Number:
- IXDD604SI
- Manufacturer:
- IXYS Integrated Circuits Division
- Ventron No:
- 3253744-IXDD604SI
- Description:
- IC GATE DVR 4A DUAL ENABLE 8SOIC
- Datasheet:
- IXDD604SI
Description
The IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers are high-speed gate drivers designed for driving IXYS MOSFETs and IGBTs. Each output can source and sink 4A of current with voltage rise and fall times of less than 10ns. The input is immune to latch-up, and proprietary circuitry eliminates cross-conduction and current "shoot-through." Low propagation delay and fast, matched rise and fall times make the IXD604 family ideal for high-frequency and high-power applications.
The IXDD604 is a dual non-inverting driver with an enable. The IXDN604 is a dual non-inverting driver, the IXDI604 is a dual inverting driver, and the IXDF604 has one inverting driver and one non-inverting driver.
The IXD604 family is available in an 8-pin DIP (PI), 8-pin SOIC (SIA), 8-pin Power SOIC with an exposed metal back (SI), and an 8-pin DFN (D2) package.
Features
4A Source/Sink Drive Current
Wide Operating Voltage Range: 4.5V to 35V
-40°C to 125°C Extended Operating Temperature Range
Logic Input Withstands Negative Swing of up to 5V
Outputs May be Connected in Parallel for Higher Drive Current
Matched Rise and Fall Times
Low Propagation Delay Time
Low, 10μA Supply Current
Low Output Impedance
Applications
Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
The IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers are high-speed gate drivers designed for driving IXYS MOSFETs and IGBTs. Each output can source and sink 4A of current with voltage rise and fall times of less than 10ns. The input is immune to latch-up, and proprietary circuitry eliminates cross-conduction and current "shoot-through." Low propagation delay and fast, matched rise and fall times make the IXD604 family ideal for high-frequency and high-power applications.
The IXDD604 is a dual non-inverting driver with an enable. The IXDN604 is a dual non-inverting driver, the IXDI604 is a dual inverting driver, and the IXDF604 has one inverting driver and one non-inverting driver.
The IXD604 family is available in an 8-pin DIP (PI), 8-pin SOIC (SIA), 8-pin Power SOIC with an exposed metal back (SI), and an 8-pin DFN (D2) package.
Features
4A Source/Sink Drive Current
Wide Operating Voltage Range: 4.5V to 35V
-40°C to 125°C Extended Operating Temperature Range
Logic Input Withstands Negative Swing of up to 5V
Outputs May be Connected in Parallel for Higher Drive Current
Matched Rise and Fall Times
Low Propagation Delay Time
Low, 10μA Supply Current
Low Output Impedance
Applications
Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
IXYS Integrated Circuits Division IXDD604SI technical specifications, attributes, parameters and parts with similar specifications to IXYS Integrated Circuits Division IXDD604SI.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Number of Pins8
- Supplier Device Package8-SOIC-EP
- Weight540.001716mg
- Operating Temperature-40°C~125°C TA
- PackagingTube
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature125°C
- Min Operating Temperature-40°C
- Voltage - Supply4.5V~35V
- Number of Outputs2
- Max Output Current4A
- Number of Channels2
- Max Supply Voltage35V
- Min Supply Voltage4.5V
- Operating Supply Current10μA
- Output Current4A
- Propagation Delay40 ns
- Input TypeNon-Inverting
- Turn On Delay Time50 ns
- Rise Time16ns
- Fall Time (Typ)14 ns
- Rise / Fall Time (Typ)9ns 8ns
- Channel TypeIndependent
- Number of Drivers2
- Driven ConfigurationLow-Side
- Gate TypeIGBT, N-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink)4A 4A
- Logic Voltage - VIL, VIH0.8V 3V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
The three parts on the right have similar specifications to IXDD604SI.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - SupplyNumber of OutputsMax Output CurrentNumber of ChannelsMax Supply VoltageMin Supply VoltageOperating Supply CurrentOutput CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Rise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHRadiation HardeningRoHS StatusNumber of TerminationsECCN CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNominal Supply CurrentInterface IC TypeTurn On TimeOutput Peak Current Limit-NomHigh Side DriverTurn Off TimeHeight Seated (Max)LengthWidthSubcategoryMax Power DissipationOperating Supply VoltageLead FreeJESD-609 CodeTerminal FinishBuilt-in ProtectionsView Compare
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IXDD604SI8 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width) Exposed Pad88-SOIC-EP540.001716mg-40°C~125°C TATube2010Active1 (Unlimited)125°C-40°C4.5V~35V24A235V4.5V10μA4A40 nsNon-Inverting50 ns16ns14 ns9ns 8nsIndependent2Low-SideIGBT, N-Channel, P-Channel MOSFET4A 4A0.8V 3VNoROHS3 Compliant------------------------------
-
-Through HoleThrough Hole8-DIP (0.300, 7.62mm)--599.989307mg-55°C~150°C TJTube2007Obsolete1 (Unlimited)--4.5V~30V--------Non-Inverting-40ns50 ns25ns 22nsSingle1Low-SideIGBT, N-Channel, P-Channel MOSFET14A 14A1V 2.5V-RoHS Compliant8EAR99CMOSDUALNOT SPECIFIED118V2.54mmNOT SPECIFIEDIXD*5148R-PDIP-T8Not Qualified3mABUFFER OR INVERTER BASED MOSFET DRIVER0.06 μs14ANO0.06 μs4.57mm9.59mm7.62mm-------
-
-Through HoleThrough Hole8-DIP (0.300, 7.62mm)8-599.989307mg-40°C~150°C TJTube2001ObsoleteNot Applicable--4.5V~25V------8A-Non-Inverting-18ns19 ns14ns 15nsSingle1Low-SideIGBT, N-Channel, P-Channel MOSFET8A 8A0.8V 3.5V-RoHS Compliant8EAR99CMOSDUALNOT SPECIFIED118V2.54mmNOT SPECIFIEDIXD*4088-Not Qualified3mABUFFER OR INVERTER BASED MOSFET DRIVER0.042 µs8AYES-4.57mm9.59mm7.62mmMOSFET Drivers975mW25VLead Free---
-
-Through HoleThrough HoleTO-220-55-3.000003g-55°C~150°C TJTube2001ObsoleteNot Applicable--4.5V~35V------14A-Non-Inverting-29ns26 ns25ns 22nsSingle1Low-SideIGBT, N-Channel, P-Channel MOSFET14A 14A0.8V 3.5V-RoHS Compliant5EAR99CMOS-260118V-35IXD*4143-Not Qualified3mABUFFER OR INVERTER BASED PERIPHERAL DRIVER33 µs14A-34 µs----12.5W35VLead Freee3Matte Tin (Sn)TRANSIENT; OVER CURRENT; OVER VOLTAGE
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