IXYS IXDD430MCI
- Part Number:
- IXDD430MCI
- Manufacturer:
- IXYS
- Ventron No:
- 3255331-IXDD430MCI
- Description:
- IC DRVR MOSF/IGBT 30A TO220-5
- Datasheet:
- IXDD430MCI
IXYS IXDD430MCI technical specifications, attributes, parameters and parts with similar specifications to IXYS IXDD430MCI.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-5
- Weight2.299997g
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2005
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation2W
- Voltage - Supply8.5V~35V
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage18V
- Reflow Temperature-Max (s)35
- Base Part NumberIXD*430
- Pin Count3
- JESD-30 CodeR-PSFM-T5
- Qualification StatusNot Qualified
- Operating Supply Voltage35V
- Nominal Supply Current3mA
- Output Current30A
- Input TypeNon-Inverting
- Rise Time20ns
- Fall Time (Typ)18 ns
- Rise / Fall Time (Typ)18ns 16ns
- Interface IC TypeBUFFER OR INVERTER BASED IGBT/MOSFET DRIVER
- Channel TypeSingle
- Number of Drivers1
- Turn On Time0.045 µs
- Output Peak Current Limit-Nom30A
- Driven ConfigurationLow-Side
- Gate TypeIGBT, N-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink)30A 30A
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 3.5V
- Turn Off Time0.039 µs
- RoHS StatusRoHS Compliant
IXDD430MCI Overview
The product was first published in 2005 and has since been a reliable choice for many industries. Its terminal finish is a matte tin (Sn), providing a durable and corrosion-resistant surface. The voltage supply range is 8.5V~35V, making it suitable for a wide range of applications. With a peak reflow temperature of 260°C and a maximum reflow time of 35 seconds, this product can withstand high temperatures during assembly. It operates at a supply voltage of 35V and has an output current of 30A, ensuring efficient and stable performance. The rise time is only 20ns, making it a fast and responsive option. The gate type is an IGBT, N-channel, P-channel MOSFET, and the logic voltage range is 0.8V to 3.5V for VIL and VIH, respectively. Overall, this product offers high-quality performance and reliability for various industrial needs.
IXDD430MCI Features
Embedded in the Bulk package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
Maximum power dissipation of 2W
IXDD430MCI Applications
There are a lot of IXYS IXDD430MCI gate drivers applications.
Broadcast equipment
Dual-Battery Systems
Portable Navigation Devices
Refrigerator
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Smart Phones
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Active filtering
Isolated switch mode power supplies (SMPS)
High frequency line drivers
The product was first published in 2005 and has since been a reliable choice for many industries. Its terminal finish is a matte tin (Sn), providing a durable and corrosion-resistant surface. The voltage supply range is 8.5V~35V, making it suitable for a wide range of applications. With a peak reflow temperature of 260°C and a maximum reflow time of 35 seconds, this product can withstand high temperatures during assembly. It operates at a supply voltage of 35V and has an output current of 30A, ensuring efficient and stable performance. The rise time is only 20ns, making it a fast and responsive option. The gate type is an IGBT, N-channel, P-channel MOSFET, and the logic voltage range is 0.8V to 3.5V for VIL and VIH, respectively. Overall, this product offers high-quality performance and reliability for various industrial needs.
IXDD430MCI Features
Embedded in the Bulk package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
Maximum power dissipation of 2W
IXDD430MCI Applications
There are a lot of IXYS IXDD430MCI gate drivers applications.
Broadcast equipment
Dual-Battery Systems
Portable Navigation Devices
Refrigerator
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Smart Phones
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Active filtering
Isolated switch mode power supplies (SMPS)
High frequency line drivers
IXDD430MCI More Descriptions
IC Gate Drvr Low-side TO220-5
IC DRVR MOSF/IGBT 30A TO220-5
IC DRVR MOSF/IGBT 30A TO220-5
The three parts on the right have similar specifications to IXDD430MCI.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationVoltage - SupplyPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Supply VoltageNominal Supply CurrentOutput CurrentInput TypeRise TimeFall Time (Typ)Rise / Fall Time (Typ)Interface IC TypeChannel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeRoHS StatusNumber of PinsTechnologyBuilt-in ProtectionsLead FreeSubcategoryTerminal PositionHeight Seated (Max)LengthView Compare
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IXDD430MCIThrough HoleThrough HoleTO-220-52.299997g-55°C~150°C TJBulk2005e3Obsolete1 (Unlimited)5EAR99Matte Tin (Sn)2W8.5V~35V260118V35IXD*4303R-PSFM-T5Not Qualified35V3mA30ANon-Inverting20ns18 ns18ns 16nsBUFFER OR INVERTER BASED IGBT/MOSFET DRIVERSingle10.045 µs30ALow-SideIGBT, N-Channel, P-Channel MOSFET30A 30AYES0.8V 3.5V0.039 µsRoHS Compliant---------
-
Through HoleThrough HoleTO-220-53.000003g-55°C~150°C TJTube2001e3ObsoleteNot Applicable5EAR99Matte Tin (Sn)12.5W4.5V~35V260118V35IXD*4143-Not Qualified35V3mA14ANon-Inverting29ns26 ns25ns 22nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERSingle133 µs14ALow-SideIGBT, N-Channel, P-Channel MOSFET14A 14A-0.8V 3.5V34 µsRoHS Compliant5CMOSTRANSIENT; OVER CURRENT; OVER VOLTAGELead Free----
-
Through HoleThrough HoleTO-220-53.000003g-40°C~150°C TJTube2001e3ObsoleteNot Applicable5EAR99Matte Tin (Sn)17W4.5V~25V260118V35IXD*4083-Not Qualified25V3mA8ANon-Inverting18ns19 ns14ns 15nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle10.042 µs8ALow-SideIGBT, N-Channel, P-Channel MOSFET8A 8AYES0.8V 3.5V0.038 µsRoHS Compliant5--Lead Free----
-
Through HoleThrough Hole8-DIP (0.300, 7.62mm)599.989307mg-55°C~150°C TJTube2004e3ObsoleteNot Applicable8EAR99Matte Tin (Sn)-4.5V~35V260218V35IXD*4048-Not Qualified35V3mA4ANon-Inverting18ns17 ns16ns 13nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent20.06 μs4ALow-SideIGBT, N-Channel, P-Channel MOSFET4A 4A-0.8V 2.5V0.059 μsRoHS Compliant8CMOSOVER CURRENT; THERMALLead FreeMOSFET DriversDUAL4.57mm9.59mm
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