IXDD430MCI

IXYS IXDD430MCI

Part Number:
IXDD430MCI
Manufacturer:
IXYS
Ventron No:
3255331-IXDD430MCI
Description:
IC DRVR MOSF/IGBT 30A TO220-5
ECAD Model:
Datasheet:
IXDD430MCI

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Specifications
IXYS IXDD430MCI technical specifications, attributes, parameters and parts with similar specifications to IXYS IXDD430MCI.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-5
  • Weight
    2.299997g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Power Dissipation
    2W
  • Voltage - Supply
    8.5V~35V
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    18V
  • Reflow Temperature-Max (s)
    35
  • Base Part Number
    IXD*430
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T5
  • Qualification Status
    Not Qualified
  • Operating Supply Voltage
    35V
  • Nominal Supply Current
    3mA
  • Output Current
    30A
  • Input Type
    Non-Inverting
  • Rise Time
    20ns
  • Fall Time (Typ)
    18 ns
  • Rise / Fall Time (Typ)
    18ns 16ns
  • Interface IC Type
    BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER
  • Channel Type
    Single
  • Number of Drivers
    1
  • Turn On Time
    0.045 µs
  • Output Peak Current Limit-Nom
    30A
  • Driven Configuration
    Low-Side
  • Gate Type
    IGBT, N-Channel, P-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    30A 30A
  • High Side Driver
    YES
  • Logic Voltage - VIL, VIH
    0.8V 3.5V
  • Turn Off Time
    0.039 µs
  • RoHS Status
    RoHS Compliant
Description
IXDD430MCI Overview
The product was first published in 2005 and has since been a reliable choice for many industries. Its terminal finish is a matte tin (Sn), providing a durable and corrosion-resistant surface. The voltage supply range is 8.5V~35V, making it suitable for a wide range of applications. With a peak reflow temperature of 260°C and a maximum reflow time of 35 seconds, this product can withstand high temperatures during assembly. It operates at a supply voltage of 35V and has an output current of 30A, ensuring efficient and stable performance. The rise time is only 20ns, making it a fast and responsive option. The gate type is an IGBT, N-channel, P-channel MOSFET, and the logic voltage range is 0.8V to 3.5V for VIL and VIH, respectively. Overall, this product offers high-quality performance and reliability for various industrial needs.

IXDD430MCI Features
Embedded in the Bulk package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
Maximum power dissipation of 2W

IXDD430MCI Applications
There are a lot of IXYS IXDD430MCI gate drivers applications.

Broadcast equipment
Dual-Battery Systems
Portable Navigation Devices
Refrigerator
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Smart Phones
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Active filtering
Isolated switch mode power supplies (SMPS)
High frequency line drivers
IXDD430MCI More Descriptions
IC Gate Drvr Low-side TO220-5
IC DRVR MOSF/IGBT 30A TO220-5
Product Comparison
The three parts on the right have similar specifications to IXDD430MCI.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Voltage - Supply
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Supply Voltage
    Nominal Supply Current
    Output Current
    Input Type
    Rise Time
    Fall Time (Typ)
    Rise / Fall Time (Typ)
    Interface IC Type
    Channel Type
    Number of Drivers
    Turn On Time
    Output Peak Current Limit-Nom
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    High Side Driver
    Logic Voltage - VIL, VIH
    Turn Off Time
    RoHS Status
    Number of Pins
    Technology
    Built-in Protections
    Lead Free
    Subcategory
    Terminal Position
    Height Seated (Max)
    Length
    View Compare
  • IXDD430MCI
    IXDD430MCI
    Through Hole
    Through Hole
    TO-220-5
    2.299997g
    -55°C~150°C TJ
    Bulk
    2005
    e3
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    2W
    8.5V~35V
    260
    1
    18V
    35
    IXD*430
    3
    R-PSFM-T5
    Not Qualified
    35V
    3mA
    30A
    Non-Inverting
    20ns
    18 ns
    18ns 16ns
    BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER
    Single
    1
    0.045 µs
    30A
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    30A 30A
    YES
    0.8V 3.5V
    0.039 µs
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXDD414CI
    Through Hole
    Through Hole
    TO-220-5
    3.000003g
    -55°C~150°C TJ
    Tube
    2001
    e3
    Obsolete
    Not Applicable
    5
    EAR99
    Matte Tin (Sn)
    12.5W
    4.5V~35V
    260
    1
    18V
    35
    IXD*414
    3
    -
    Not Qualified
    35V
    3mA
    14A
    Non-Inverting
    29ns
    26 ns
    25ns 22ns
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    Single
    1
    33 µs
    14A
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    14A 14A
    -
    0.8V 3.5V
    34 µs
    RoHS Compliant
    5
    CMOS
    TRANSIENT; OVER CURRENT; OVER VOLTAGE
    Lead Free
    -
    -
    -
    -
  • IXDD408CI
    Through Hole
    Through Hole
    TO-220-5
    3.000003g
    -40°C~150°C TJ
    Tube
    2001
    e3
    Obsolete
    Not Applicable
    5
    EAR99
    Matte Tin (Sn)
    17W
    4.5V~25V
    260
    1
    18V
    35
    IXD*408
    3
    -
    Not Qualified
    25V
    3mA
    8A
    Non-Inverting
    18ns
    19 ns
    14ns 15ns
    BUFFER OR INVERTER BASED MOSFET DRIVER
    Single
    1
    0.042 µs
    8A
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    8A 8A
    YES
    0.8V 3.5V
    0.038 µs
    RoHS Compliant
    5
    -
    -
    Lead Free
    -
    -
    -
    -
  • IXDD404PI
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    599.989307mg
    -55°C~150°C TJ
    Tube
    2004
    e3
    Obsolete
    Not Applicable
    8
    EAR99
    Matte Tin (Sn)
    -
    4.5V~35V
    260
    2
    18V
    35
    IXD*404
    8
    -
    Not Qualified
    35V
    3mA
    4A
    Non-Inverting
    18ns
    17 ns
    16ns 13ns
    BUFFER OR INVERTER BASED PERIPHERAL DRIVER
    Independent
    2
    0.06 μs
    4A
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    4A 4A
    -
    0.8V 2.5V
    0.059 μs
    RoHS Compliant
    8
    CMOS
    OVER CURRENT; THERMAL
    Lead Free
    MOSFET Drivers
    DUAL
    4.57mm
    9.59mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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