ISSI, Integrated Silicon Solution Inc IS66WVE2M16EBLL-55BLI-TR
- Part Number:
- IS66WVE2M16EBLL-55BLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3232957-IS66WVE2M16EBLL-55BLI-TR
- Description:
- IC PSRAM 32MBIT 55NS 48BGA
- Datasheet:
- IS66WVE2M16EBLL-55BLI-TR
ISSI, Integrated Silicon Solution Inc IS66WVE2M16EBLL-55BLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS66WVE2M16EBLL-55BLI-TR.
- Mounting TypeSurface Mount
- Package / Case48-TFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- TechnologyPSRAM (Pseudo SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size32Mb 2M x 16
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatPSRAM
- Memory InterfaceParallel
- Organization2MX16
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Memory Density33554432 bit
- Access Time (Max)60 ns
- Height Seated (Max)1.2mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
IS66WVE2M16EBLL-55BLI-TR Overview
This product has a surface mount option and is also Pbfree. It is currently an active part in production. The peak reflow temperature is not specified. The terminal pitch is 0.75mm and the maximum supply voltage is 3.6V. The memory size is 32Mb, with an organization of 2MX16 and a memory interface of parallel. The write cycle time for each word or page is 55ns.
IS66WVE2M16EBLL-55BLI-TR Features
Package / Case: 48-TFBGA
IS66WVE2M16EBLL-55BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE2M16EBLL-55BLI-TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
This product has a surface mount option and is also Pbfree. It is currently an active part in production. The peak reflow temperature is not specified. The terminal pitch is 0.75mm and the maximum supply voltage is 3.6V. The memory size is 32Mb, with an organization of 2MX16 and a memory interface of parallel. The write cycle time for each word or page is 55ns.
IS66WVE2M16EBLL-55BLI-TR Features
Package / Case: 48-TFBGA
IS66WVE2M16EBLL-55BLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS66WVE2M16EBLL-55BLI-TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
IS66WVE2M16EBLL-55BLI-TR More Descriptions
32M ,P SRAM,A /P , 2M 16,55 ,VDD 2.7V3.6V, VDDQ 2.7V3.6V,48 B BGA (6 8 ), R HS
PSRAM Async 32M-Bit 2M x 16 55ns 48-Pin TFBGA T/R
IC PSRAM 32MBIT PARALLEL 48TFBGA
PSRAM Async 32M-Bit 2M x 16 55ns 48-Pin TFBGA T/R
IC PSRAM 32MBIT PARALLEL 48TFBGA
The three parts on the right have similar specifications to IS66WVE2M16EBLL-55BLI-TR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusFactory Lead TimeSupply VoltageClock FrequencyView Compare
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IS66WVE2M16EBLL-55BLI-TRSurface Mount48-TFBGAYES-40°C~85°C TATape & Reel (TR)yesActive3 (168 Hours)48PSRAM (Pseudo SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED10.75mmNOT SPECIFIEDR-PBGA-B483.6V2.7V32Mb 2M x 16VolatileASYNCHRONOUSPSRAMParallel2MX161655ns33554432 bit60 ns1.2mm8mm6mmROHS3 Compliant----
-
Surface Mount24-TBGAYES-40°C~85°C TATape & Reel (TR)-Active3 (168 Hours)24PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOMNOT SPECIFIED11mmNOT SPECIFIEDR-PBGA-B241.95V1.7V64Mb 8M x 8VolatileSYNCHRONOUSPSRAMParallel8MX8836ns67108864 bit36 ns1.2mm8mm6mmROHS3 Compliant10 Weeks1.8V166MHz
-
Surface Mount48-TFBGAYES-40°C~85°C TATape & Reel (TR)-Active3 (168 Hours)48PSRAM (Pseudo SRAM)1.7V~1.95VBOTTOMNOT SPECIFIED10.75mmNOT SPECIFIEDR-PBGA-B481.95V1.7V32Mb 2M x 16VolatileASYNCHRONOUSPSRAMParallel2MX161670ns33554432 bit70 ns1.2mm8mm6mmROHS3 Compliant10 Weeks--
-
Surface Mount54-VFBGA--40°C~85°C TCTape & Reel (TR)-Active3 (168 Hours)-PSRAM (Pseudo SRAM)1.7V~1.95V--------64Mb 4M x 16Volatile-PSRAMParallel--70ns-----ROHS3 Compliant10 Weeks--
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