ISSI, Integrated Silicon Solution Inc IS61NVF51236-6.5TQL
- Part Number:
- IS61NVF51236-6.5TQL
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3245317-IS61NVF51236-6.5TQL
- Description:
- IC SRAM 18MBIT 6.5NS 100TQFP
- Datasheet:
- IS61N(LF,VF)25672, 51236, 102418
ISSI, Integrated Silicon Solution Inc IS61NVF51236-6.5TQL technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61NVF51236-6.5TQL.
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Number of Pins100
- Operating Temperature0°C~70°C TA
- PackagingTray
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations100
- ECCN Code3A991.B.2.A
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureFLOW-THROUGH ARCHITECTURE
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply2.375V~2.625V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count100
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.625V
- Power Supplies2.5V
- Supply Voltage-Min (Vsup)2.375V
- Memory Size18Mb 512K x 36
- Memory TypeVolatile
- Supply Current-Max0.45mA
- Access Time6.5ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization512KX36
- Output Characteristics3-STATE
- Memory Width36
- Standby Current-Max0.06A
- Memory Density18874368 bit
- Max Frequency133MHz
- I/O TypeCOMMON
- Standby Voltage-Min2.38V
- Height Seated (Max)1.6mm
- Length20mm
- Width14mm
- RoHS StatusRoHS Compliant
IS61NVF51236-6.5TQL Overview
The product is packaged in a tray and has a JESD-609 code of e3. It is currently listed as obsolete. The voltage supply range is 2.375V to 2.625V and the peak reflow temperature is not specified. The supply voltage is 2.5V and the time at maximum peak reflow temperature is also not specified. The product has not yet been qualified and has a memory size of 18Mb (512K x 36). Its length is 20mm.
IS61NVF51236-6.5TQL Features
Package / Case: 100-LQFP
100 Pins
Additional Feature:FLOW-THROUGH ARCHITECTURE
I/O Type: COMMON
IS61NVF51236-6.5TQL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NVF51236-6.5TQL Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The product is packaged in a tray and has a JESD-609 code of e3. It is currently listed as obsolete. The voltage supply range is 2.375V to 2.625V and the peak reflow temperature is not specified. The supply voltage is 2.5V and the time at maximum peak reflow temperature is also not specified. The product has not yet been qualified and has a memory size of 18Mb (512K x 36). Its length is 20mm.
IS61NVF51236-6.5TQL Features
Package / Case: 100-LQFP
100 Pins
Additional Feature:FLOW-THROUGH ARCHITECTURE
I/O Type: COMMON
IS61NVF51236-6.5TQL Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61NVF51236-6.5TQL Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
IS61NVF51236-6.5TQL More Descriptions
18Mb, "No-Wait"/Flowthrough, Sync, 512K x 36, 6.5ns, 2.5v - I/O, 100 Pin TQFP, RoHS
SRAM Chip Sync Quad 2.5V 18M-bit 512K x 36 6.5ns 100-Pin TQFP
IC SRAM 18MBIT PARALLEL 100TQFP
SRAM 18Mb (512Kx36) 6.5ns Sync SRAM 2.5v
SRAM Chip Sync Quad 2.5V 18M-bit 512K x 36 6.5ns 100-Pin TQFP
IC SRAM 18MBIT PARALLEL 100TQFP
SRAM 18Mb (512Kx36) 6.5ns Sync SRAM 2.5v
The three parts on the right have similar specifications to IS61NVF51236-6.5TQL.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityMax FrequencyI/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeClock FrequencyAccess Time (Max)Reach Compliance CodeJESD-30 CodeView Compare
-
IS61NVF51236-6.5TQLSurface Mount100-LQFPYES1000°C~70°C TATraye3yesObsolete3 (168 Hours)1003A991.B.2.AMatte Tin (Sn) - annealedFLOW-THROUGH ARCHITECTURE8542.32.00.41SRAM - Synchronous, SDR2.375V~2.625VQUADNOT SPECIFIED12.5V0.65mmNOT SPECIFIED100Not Qualified2.625V2.5V2.375V18Mb 512K x 36Volatile0.45mA6.5nsSRAMParallel512KX363-STATE360.06A18874368 bit133MHzCOMMON2.38V1.6mm20mm14mmRoHS Compliant------
-
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)1653A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V-1.71V72Mb 4M x 18Volatile--SRAMParallel4MX18-18-75497472 bit---1.4mm17mm15mmROHS3 Compliant12 Weeks250MHz0.45 ns--
-
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)1653A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V-1.71V72Mb 4M x 18Volatile--SRAMParallel4MX18-18-75497472 bit---1.4mm17mm15mmROHS3 Compliant12 Weeks300MHz0.45 ns--
-
Surface Mount165-LBGAYES--40°C~85°C TATray--Last Time Buy3 (168 Hours)1653A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm-165-1.89V-1.71V72Mb 4M x 18Volatile-1.48nsSRAMParallel4MX18-18-75497472 bit---1.4mm17mm15mm--300MHz-compliantR-PBGA-B165
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