ISSI, Integrated Silicon Solution Inc IS61LV12816L-10TI
- Part Number:
- IS61LV12816L-10TI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3233418-IS61LV12816L-10TI
- Description:
- IC SRAM 2MBIT 10NS 44TSOP
- ECAD Model:
-
- Datasheet:
- IS61LV12816L
ISSI, Integrated Silicon Solution Inc IS61LV12816L-10TI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LV12816L-10TI.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Number of Pins44
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations44
- Terminal FinishTin/Lead (Sn/Pb)
- TechnologySRAM - Asynchronous
- Voltage - Supply3.135V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count44
- Qualification StatusNot Qualified
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.63V
- Supply Voltage-Min (Vsup)2.97V
- Memory Size2Mb 128K x 16
- Number of Ports1
- Nominal Supply Current65mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Address Bus Width17b
- Density2 Mb
- Standby Current-Max0.004A
- I/O TypeCOMMON
- Sync/AsyncAsynchronous
- Word Size16b
- Standby Voltage-Min2V
- RoHS StatusNon-RoHS Compliant
IS61LV12816L-10TI Overview
This product features a Surface Mount mounting type, making it suitable for a wide range of applications. It utilizes SRAM - Asynchronous technology, ensuring high-speed data access and reliable performance. The Terminal Position is DUAL, providing flexibility in circuit design and layout. With a peak reflow temperature that is not specified, this product can withstand a variety of operating conditions. The Terminal Pitch of 0.8mm allows for efficient PCB layout and space-saving. With a Supply Voltage-Min of 2.97V, this product is designed to operate with low power consumption. Its Memory Format is SRAM and Memory Width is 16, providing ample storage capacity. With a fast Write Cycle Time of 10ns for both word and page, this product offers efficient data transfer. The Standby Current-Max of 0.004A ensures low power consumption during idle periods.
IS61LV12816L-10TI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV12816L-10TI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV12816L-10TI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
This product features a Surface Mount mounting type, making it suitable for a wide range of applications. It utilizes SRAM - Asynchronous technology, ensuring high-speed data access and reliable performance. The Terminal Position is DUAL, providing flexibility in circuit design and layout. With a peak reflow temperature that is not specified, this product can withstand a variety of operating conditions. The Terminal Pitch of 0.8mm allows for efficient PCB layout and space-saving. With a Supply Voltage-Min of 2.97V, this product is designed to operate with low power consumption. Its Memory Format is SRAM and Memory Width is 16, providing ample storage capacity. With a fast Write Cycle Time of 10ns for both word and page, this product offers efficient data transfer. The Standby Current-Max of 0.004A ensures low power consumption during idle periods.
IS61LV12816L-10TI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON
IS61LV12816L-10TI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LV12816L-10TI Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
IS61LV12816L-10TI More Descriptions
SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 10ns 44-Pin TSOP-II
Standard SRAM, 128KX16, 10ns, CMOS, PDSO44
IC SRAM 2MBIT PARALLEL 44TSOP II
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
Standard SRAM, 128KX16, 10ns, CMOS, PDSO44
IC SRAM 2MBIT PARALLEL 44TSOP II
SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
The three parts on the right have similar specifications to IS61LV12816L-10TI.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeSync/AsyncWord SizeStandby Voltage-MinRoHS StatusFactory Lead TimeSurface MountECCN CodeAdditional FeatureHTS CodeClock FrequencyOrganizationMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageAccess TimeRadiation HardeningView Compare
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IS61LV12816L-10TISurface MountSurface Mount44-TSOP (0.400, 10.16mm Width)44-40°C~85°C TATraye0noNot For New Designs2 (1 Year)44Tin/Lead (Sn/Pb)SRAM - Asynchronous3.135V~3.6VDUALNOT SPECIFIED13.3V0.8mmNOT SPECIFIED44Not Qualified3.3V3.63V2.97V2Mb 128K x 16165mAVolatileSRAMParallel3-STATE1610ns17b2 Mb0.004ACOMMONAsynchronous16b2VNon-RoHS Compliant--------------------- -
-Surface Mount165-LBGA1650°C~70°C TATray--Active3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165--1.89V1.71V72Mb 4M x 18--VolatileSRAMParallel-18--------ROHS3 Compliant12 WeeksYES3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41250MHz4MX1875497472 bit0.45 ns17mm1.4mm15mm--------
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-Surface Mount165-LBGA1650°C~70°C TATray--Active3 (168 Hours)165-SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165--1.89V1.71V72Mb 4M x 18--VolatileSRAMParallel-18--------ROHS3 Compliant12 WeeksYES3A991.B.2.APIPELINED ARCHITECTURE8542.32.00.41300MHz4MX1875497472 bit0.45 ns17mm1.4mm15mm--------
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-Surface Mount44-BSOJ (0.400, 10.16mm Width)44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)--SRAM - Asynchronous4.5V~5.5V--------5V--4Mb 256K x 16150mAVolatileSRAMParallel--10ns18b4 Mb--Asynchronous16b-ROHS3 Compliant8 Weeks-----------44-SOJ85°C-40°CParallel5.5V4.5V10nsNo
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ISSI, Integrated Silicon Solution Inc
5V V Surface Mount 32 Pin Memory IC 4 Mb kb 20.75mm mm 15mA mA 8b b
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