ISSI, Integrated Silicon Solution Inc IS61LPS51218B-200TQLI
- Part Number:
- IS61LPS51218B-200TQLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3228784-IS61LPS51218B-200TQLI
- Description:
- IC SRAM 9MBIT 200MHZ 100LQFP
- Datasheet:
- IS61LPS51218B-200TQLI
ISSI, Integrated Silicon Solution Inc IS61LPS51218B-200TQLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LPS51218B-200TQLI.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations100
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.465V
- Terminal PositionQUAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PQFP-G100
- Supply Voltage-Max (Vsup)3.465V
- Supply Voltage-Min (Vsup)3.135V
- Memory Size9Mb 512K x 18
- Memory TypeVolatile
- Clock Frequency200MHz
- Access Time3.1ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization512KX18
- Memory Width18
- Memory Density9437184 bit
- Height Seated (Max)1.6mm
- Length20mm
- Width14mm
- RoHS StatusROHS3 Compliant
IS61LPS51218B-200TQLI Overview
The product is designed for surface mounting and has a moisture sensitivity level of 3, which means it can withstand exposure to moisture for up to 168 hours. It utilizes SRAM technology and operates synchronously in a single data rate. The voltage supply range is between 3.135V and 3.465V. The peak reflow temperature is not specified. It has 1 function and a maximum supply voltage of 3.465V. The organization of the memory is 512KX18, with a memory width of 18. The maximum seated height is 1.6mm.
IS61LPS51218B-200TQLI Features
Package / Case: 100-LQFP
IS61LPS51218B-200TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LPS51218B-200TQLI Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
The product is designed for surface mounting and has a moisture sensitivity level of 3, which means it can withstand exposure to moisture for up to 168 hours. It utilizes SRAM technology and operates synchronously in a single data rate. The voltage supply range is between 3.135V and 3.465V. The peak reflow temperature is not specified. It has 1 function and a maximum supply voltage of 3.465V. The organization of the memory is 512KX18, with a memory width of 18. The maximum seated height is 1.6mm.
IS61LPS51218B-200TQLI Features
Package / Case: 100-LQFP
IS61LPS51218B-200TQLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LPS51218B-200TQLI Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS61LPS51218B-200TQLI More Descriptions
8542.32.00.41 Surface Mount Tray 512KX18 ic memory 200MHz 3.1ns 14mm 9437184bit
SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 3.1ns 100-Pin TQFP
SRAM SYNC.PIPE,200MHz,3CE 512K x18, 3.3v I/O
IC SRAM 9MBIT PARALLEL 100LQFP
Single Cycle Deselect Static RAM
8Mb,pipeline,sync,512K X 18,200Mhz,3.3V I/O,100 Pin Tqfp, 3Ce, Rohs |Integrated Silicon Solution (Issi) IS61LPS51218B-200TQLI
SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 3.1ns 100-Pin TQFP
SRAM SYNC.PIPE,200MHz,3CE 512K x18, 3.3v I/O
IC SRAM 9MBIT PARALLEL 100LQFP
Single Cycle Deselect Static RAM
8Mb,pipeline,sync,512K X 18,200Mhz,3.3V I/O,100 Pin Tqfp, 3Ce, Rohs |Integrated Silicon Solution (Issi) IS61LPS51218B-200TQLI
The three parts on the right have similar specifications to IS61LPS51218B-200TQLI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsECCN CodeAdditional FeaturePin CountAccess Time (Max)Reach Compliance CodeView Compare
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IS61LPS51218B-200TQLI12 WeeksSurface Mount100-LQFPYES-40°C~85°C TATrayActive3 (168 Hours)1008542.32.00.41SRAM - Synchronous, SDR3.135V~3.465VQUADNOT SPECIFIED13.3V0.65mmNOT SPECIFIEDR-PQFP-G1003.465V3.135V9Mb 512K x 18Volatile200MHz3.1nsSRAMParallel512KX18189437184 bit1.6mm20mm14mmROHS3 Compliant-------
-
12 WeeksSurface Mount165-LBGAYES0°C~70°C TATrayActive3 (168 Hours)1658542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED-1.89V1.71V72Mb 4M x 18Volatile250MHz-SRAMParallel4MX181875497472 bit1.4mm17mm15mmROHS3 Compliant1653A991.B.2.APIPELINED ARCHITECTURE1650.45 ns-
-
12 WeeksSurface Mount165-LBGAYES0°C~70°C TATrayActive3 (168 Hours)1658542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED-1.89V1.71V72Mb 4M x 18Volatile300MHz-SRAMParallel4MX181875497472 bit1.4mm17mm15mmROHS3 Compliant1653A991.B.2.APIPELINED ARCHITECTURE1650.45 ns-
-
-Surface Mount165-LBGAYES-40°C~85°C TATrayLast Time Buy3 (168 Hours)1658542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOM-11.8V1mm-R-PBGA-B1651.89V1.71V72Mb 4M x 18Volatile300MHz1.48nsSRAMParallel4MX181875497472 bit1.4mm17mm15mm--3A991.B.2.APIPELINED ARCHITECTURE165-compliant
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