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IS61LPS25636A-200TQ2I

ISSI, Integrated Silicon Solution Inc IS61LPS25636A-200TQ2I

Part Number:
IS61LPS25636A-200TQ2I
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Ventron No:
3236111-IS61LPS25636A-200TQ2I
Description:
IC SRAM 9MBIT 200MHZ 100TQFP
ECAD Model:
Datasheet:
IS61LPS(VPS)51218A/25636A, IS64LPS25636A

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Specifications
ISSI, Integrated Silicon Solution Inc IS61LPS25636A-200TQ2I technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61LPS25636A-200TQ2I.
  • Mounting Type
    Surface Mount
  • Package / Case
    100-LQFP
  • Surface Mount
    YES
  • Number of Pins
    100
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    100
  • ECCN Code
    3A991.B.2.A
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    PIPELINED ARCHITECTURE
  • HTS Code
    8542.32.00.41
  • Technology
    SRAM - Synchronous, SDR
  • Voltage - Supply
    3.135V~3.465V
  • Terminal Position
    QUAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    3.3V
  • Terminal Pitch
    0.65mm
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    100
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    3.465V
  • Power Supplies
    2.5/3.33.3V
  • Supply Voltage-Min (Vsup)
    3.135V
  • Memory Size
    9Mb 256K x 36
  • Memory Type
    Volatile
  • Clock Frequency
    200MHz
  • Supply Current-Max
    0.275mA
  • Access Time
    3.1ns
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Organization
    256KX36
  • Output Characteristics
    3-STATE
  • Memory Width
    36
  • Memory Density
    9437184 bit
  • I/O Type
    COMMON
  • Standby Voltage-Min
    3.14V
  • Height Seated (Max)
    1.6mm
  • Length
    20mm
  • Width
    14mm
  • RoHS Status
    Non-RoHS Compliant
Description
IS61LPS25636A-200TQ2I Overview
This product has 100 pins and is packaged in a tray. It has 100 terminations and is classified under ECCN Code 3A991.B.2.A. The power supplies for this product are 2.5/3.3/3.3V. It has a memory size of 9Mb, specifically 256K x 36, and is of a volatile type. The clock frequency for this product is 200MHz and the maximum supply current is 0.275mA. The output characteristics are 3-STATE.

IS61LPS25636A-200TQ2I Features
Package / Case: 100-LQFP
100 Pins
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON


IS61LPS25636A-200TQ2I Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61LPS25636A-200TQ2I Memory applications.


servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS61LPS25636A-200TQ2I More Descriptions
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin LQFP
Memory - SRAM, Pipeline, Synchronous 8Mb,256Kx36,200Mhz, 3.3v I/O
CoC and 2-years warranty / RFQ for pricing
IC SRAM 9MBIT PARALLEL 100TQFP
Product Comparison
The three parts on the right have similar specifications to IS61LPS25636A-200TQ2I.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Clock Frequency
    Supply Current-Max
    Access Time
    Memory Format
    Memory Interface
    Organization
    Output Characteristics
    Memory Width
    Memory Density
    I/O Type
    Standby Voltage-Min
    Height Seated (Max)
    Length
    Width
    RoHS Status
    Factory Lead Time
    Access Time (Max)
    Reach Compliance Code
    JESD-30 Code
    View Compare
  • IS61LPS25636A-200TQ2I
    IS61LPS25636A-200TQ2I
    ISSI, Integrated Silicon Solution Inc
    Surface Mount
    100-LQFP
    YES
    100
    -40°C~85°C TA
    Tray
    e0
    no
    Not For New Designs
    2 (1 Year)
    100
    3A991.B.2.A
    Tin/Lead (Sn/Pb)
    PIPELINED ARCHITECTURE
    8542.32.00.41
    SRAM - Synchronous, SDR
    3.135V~3.465V
    QUAD
    NOT SPECIFIED
    1
    3.3V
    0.65mm
    NOT SPECIFIED
    100
    Not Qualified
    3.465V
    2.5/3.33.3V
    3.135V
    9Mb 256K x 36
    Volatile
    200MHz
    0.275mA
    3.1ns
    SRAM
    Parallel
    256KX36
    3-STATE
    36
    9437184 bit
    COMMON
    3.14V
    1.6mm
    20mm
    14mm
    Non-RoHS Compliant
    -
    -
    -
    -
    -
  • IS61DDB24M18A-250M3L
    IS61DDB24M18A-250M3L
    ISSI, Integrated Silicon Solution Inc
    Surface Mount
    165-LBGA
    YES
    165
    0°C~70°C TA
    Tray
    -
    -
    Active
    3 (168 Hours)
    165
    3A991.B.2.A
    -
    PIPELINED ARCHITECTURE
    8542.32.00.41
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    1mm
    NOT SPECIFIED
    165
    -
    1.89V
    -
    1.71V
    72Mb 4M x 18
    Volatile
    250MHz
    -
    -
    SRAM
    Parallel
    4MX18
    -
    18
    75497472 bit
    -
    -
    1.4mm
    17mm
    15mm
    ROHS3 Compliant
    12 Weeks
    0.45 ns
    -
    -
    IS61LPS25636A-200TQ2I vs IS61DDB24M18A-250M3L
  • IS61DDB24M18A-300M3L
    IS61DDB24M18A-300M3L
    ISSI, Integrated Silicon Solution Inc
    Surface Mount
    165-LBGA
    YES
    165
    0°C~70°C TA
    Tray
    -
    -
    Active
    3 (168 Hours)
    165
    3A991.B.2.A
    -
    PIPELINED ARCHITECTURE
    8542.32.00.41
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    1mm
    NOT SPECIFIED
    165
    -
    1.89V
    -
    1.71V
    72Mb 4M x 18
    Volatile
    300MHz
    -
    -
    SRAM
    Parallel
    4MX18
    -
    18
    75497472 bit
    -
    -
    1.4mm
    17mm
    15mm
    ROHS3 Compliant
    12 Weeks
    0.45 ns
    -
    -
    IS61LPS25636A-200TQ2I vs IS61DDB24M18A-300M3L
  • IS61DDB44M18A-300M3I
    IS61DDB44M18A-300M3I
    ISSI, Integrated Silicon Solution Inc
    Surface Mount
    165-LBGA
    YES
    -
    -40°C~85°C TA
    Tray
    -
    -
    Last Time Buy
    3 (168 Hours)
    165
    3A991.B.2.A
    -
    PIPELINED ARCHITECTURE
    8542.32.00.41
    SRAM - Synchronous, DDR II
    1.71V~1.89V
    BOTTOM
    -
    1
    1.8V
    1mm
    -
    165
    -
    1.89V
    -
    1.71V
    72Mb 4M x 18
    Volatile
    300MHz
    -
    1.48ns
    SRAM
    Parallel
    4MX18
    -
    18
    75497472 bit
    -
    -
    1.4mm
    17mm
    15mm
    -
    -
    -
    compliant
    R-PBGA-B165
    IS61LPS25636A-200TQ2I vs IS61DDB44M18A-300M3I
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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