ISSI, Integrated Silicon Solution Inc IS45S32200E-7BLA1-TR
- Part Number:
- IS45S32200E-7BLA1-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3252218-IS45S32200E-7BLA1-TR
- Description:
- IC SDRAM 64MBIT 143MHZ 90BGA
- ECAD Model:
-
- Datasheet:
- IS42,45S32200E
ISSI, Integrated Silicon Solution Inc IS45S32200E-7BLA1-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS45S32200E-7BLA1-TR.
- Mounting TypeSurface Mount
- Package / Case90-TFBGA
- Surface MountYES
- Number of Pins90
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations90
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionBOTTOM
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Power Supplies3.3V
- Memory Size64Mb 2M x 32
- Memory TypeVolatile
- Clock Frequency143MHz
- Supply Current-Max0.14mA
- Access Time5.5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width32b
- Organization2MX32
- Output Characteristics3-STATE
- Memory Width32
- Standby Current-Max0.002A
- Memory Density67108864 bit
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- RoHS StatusRoHS Compliant
IS45S32200E-7BLA1-TR Overview
The package or case of this particular device is a 90-TFBGA, with a total of 90 pins. It is packaged in a Tape & Reel (TR) format, which is commonly used for electronic components. The technology used in this device is SDRAM, a type of dynamic random-access memory that allows for high-speed data storage and retrieval. The terminal pitch, or distance between the pins, is 0.8mm. The organization of the memory is 2MX32, meaning it has a capacity of 2 megabits and is organized into 32 separate memory locations. The standby current-max, or the maximum amount of current used when the device is idle, is only 0.002A. This device has a refresh cycle of 4096, meaning it periodically updates its stored data. The sequential burst length is 1248FP, which refers to the number of data bits that can be accessed in a single burst. Additionally, this device is RoHS compliant, meaning it is manufactured without the use of hazardous materials.
IS45S32200E-7BLA1-TR Features
Package / Case: 90-TFBGA
90 Pins
I/O Type: COMMON
IS45S32200E-7BLA1-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S32200E-7BLA1-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The package or case of this particular device is a 90-TFBGA, with a total of 90 pins. It is packaged in a Tape & Reel (TR) format, which is commonly used for electronic components. The technology used in this device is SDRAM, a type of dynamic random-access memory that allows for high-speed data storage and retrieval. The terminal pitch, or distance between the pins, is 0.8mm. The organization of the memory is 2MX32, meaning it has a capacity of 2 megabits and is organized into 32 separate memory locations. The standby current-max, or the maximum amount of current used when the device is idle, is only 0.002A. This device has a refresh cycle of 4096, meaning it periodically updates its stored data. The sequential burst length is 1248FP, which refers to the number of data bits that can be accessed in a single burst. Additionally, this device is RoHS compliant, meaning it is manufactured without the use of hazardous materials.
IS45S32200E-7BLA1-TR Features
Package / Case: 90-TFBGA
90 Pins
I/O Type: COMMON
IS45S32200E-7BLA1-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS45S32200E-7BLA1-TR Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
IS45S32200E-7BLA1-TR More Descriptions
AUTOMOTIVE (-40 TO 85C), 64M, 3.3V, SDRAM, 2MX32, 143MHZ, 9
IC SDRAM 64MBIT 143MHZ 90BGA
IC DRAM 64MBIT PARALLEL 90TFBGA
IC SDRAM 64MBIT 143MHZ 90BGA
IC DRAM 64MBIT PARALLEL 90TFBGA
The three parts on the right have similar specifications to IS45S32200E-7BLA1-TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionSupply VoltageTerminal PitchQualification StatusPower SuppliesMemory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRoHS StatusFactory Lead TimeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureFrequencyInterfaceMax Supply VoltageMin Supply VoltageMax FrequencyECCN CodeAdditional FeatureNumber of FunctionsSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeScreening LevelLengthHeight Seated (Max)WidthJESD-30 CodeView Compare
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IS45S32200E-7BLA1-TRSurface Mount90-TFBGAYES90-40°C~85°C TATape & Reel (TR)Obsolete2 (1 Year)90SDRAM3V~3.6VBOTTOM3.3V0.8mmNot Qualified3.3V64Mb 2M x 32Volatile143MHz0.14mA5.5nsDRAMParallel32b2MX323-STATE320.002A67108864 bitCOMMON40961248FP1248RoHS Compliant---------------------- -
Surface Mount54-TSOP (0.400, 10.16mm Width)-54-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)-SDRAM3V~3.6V-----512Mb 32M x 16Volatile143MHz-5.4nsDRAMParallel16b---------ROHS3 Compliant8 Weeks54-TSOP II85°C-40°C143MHzParallel3.6V3V143MHz------------
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Surface Mount54-TSOP (0.400, 10.16mm Width)YES54-40°C~85°C TATubeActive3 (168 Hours)54SDRAM3V~3.6VDUAL3.3V0.8mmNot Qualified3.3V512Mb 32M x 16Volatile143MHz0.16mA5.4nsDRAMParallel-32MX163-STATE160.004A536870912 bitCOMMON81921248FP1248ROHS3 Compliant8 Weeks--------EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH13.6V3V1SYNCHRONOUSAEC-Q10022.22mm1.2mm10.16mm-
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Surface Mount60-TFBGAYES--40°C~105°C TATrayActive3 (168 Hours)60SDRAM3V~3.6VBOTTOM3.3V0.65mmNot Qualified3.3V16Mb 1M x 16Volatile143MHz0.08mA5.5nsDRAMParallel-1MX163-STATE160.0035A16777216 bitCOMMON20481248FP1248ROHS3 Compliant8 Weeks--------EAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH13.6V3V1SYNCHRONOUSAEC-Q10010.1mm1.2mm6.4mmR-PBGA-B60
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ISSI, Integrated Silicon Solution Inc
Surface Mount 86 Pin Memory IC 128 Mb kb 22.22mm mm 180mA mA
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ISSI, Integrated Silicon Solution Inc
Surface Mount 54 Pin Memory IC 256 Mb kb 8mm mm 130mA mA
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