Infineon Technologies IRS2330DJTRPBF
- Part Number:
- IRS2330DJTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3837962-IRS2330DJTRPBF
- Description:
- IC BRIDGE DVR 3PH 600V 44-PLCC
- Datasheet:
- IRS2330DJTRPBF
Infineon Technologies IRS2330DJTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS2330DJTRPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case44-LCC (J-Lead), 32 Leads
- Number of Pins44
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1996
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN CodeEAR99
- Resistance75Ohm
- HTS Code8542.39.00.01
- SubcategoryMOSFET Drivers
- Max Power Dissipation2W
- Voltage - Supply10V~20V
- Terminal PositionQUAD
- Terminal FormJ BEND
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage15V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIRS2330DJPBF
- Qualification StatusNot Qualified
- Output Voltage20V
- Max Output Current500mA
- Power Supplies15V
- Nominal Supply Current4mA
- Power Dissipation2W
- Output Current200mA
- Propagation Delay700 ns
- Input TypeInverting
- Turn On Delay Time50 ns
- Rise Time80ns
- Fall Time (Typ)35 ns
- Turn-Off Delay Time700 ns
- Rise / Fall Time (Typ)80ns 35ns
- Interface IC TypeBUFFER OR INVERTER BASED MOSFET DRIVER
- Channel Type3-Phase
- Number of Drivers6
- Turn On Time0.7 μs
- Driven ConfigurationHalf-Bridge
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)250mA 500mA
- High Side DriverYES
- Logic Voltage - VIL, VIH0.8V 2.2V
- Turn Off Time0.7 μs
- High Side Voltage - Max (Bootstrap)600V
- Height4.572mm
- Length16.6624mm
- Width16.6624mm
- RoHS StatusRoHS Compliant
IRS2330DJTRPBF Overview
The package or case for this particular electronic component is a 44-LCC (J-Lead) with 32 leads. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours. However, the Peak Reflow Temperature (Cel) is not specified, so it is important to handle this component with care during the reflow process. The Supply Voltage for this component is 15V, and it has not yet been qualified. The Output Voltage is 20V, and it has a Power Dissipation of 2W. The Propagation Delay is 700 ns, while the Fall Time (Typ) is 35 ns and the Rise / Fall Time (Typ) is 80ns 35ns. These specifications highlight the capabilities and limitations of this electronic component, providing important information for its safe and effective use.
IRS2330DJTRPBF Features
Embedded in the Tape & Reel (TR) package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
44 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 2W
Resistance of 75Ohm
IRS2330DJTRPBF Applications
There are a lot of Infineon Technologies IRS2330DJTRPBF gate drivers applications.
serial peripheral interface (SPI), I2C
Active Clamp Flyback or Forward and Synchronous Rectifier
Broadcast equipment
Active filtering
High current laser/LED systems
3-Phase Motor Inverter Driver
RGB applications
Portable computers
Isolated switch mode power supplies (SMPS)
DC-DC Converters
The package or case for this particular electronic component is a 44-LCC (J-Lead) with 32 leads. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can withstand exposure to moisture for up to 168 hours. However, the Peak Reflow Temperature (Cel) is not specified, so it is important to handle this component with care during the reflow process. The Supply Voltage for this component is 15V, and it has not yet been qualified. The Output Voltage is 20V, and it has a Power Dissipation of 2W. The Propagation Delay is 700 ns, while the Fall Time (Typ) is 35 ns and the Rise / Fall Time (Typ) is 80ns 35ns. These specifications highlight the capabilities and limitations of this electronic component, providing important information for its safe and effective use.
IRS2330DJTRPBF Features
Embedded in the Tape & Reel (TR) package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
44 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 2W
Resistance of 75Ohm
IRS2330DJTRPBF Applications
There are a lot of Infineon Technologies IRS2330DJTRPBF gate drivers applications.
serial peripheral interface (SPI), I2C
Active Clamp Flyback or Forward and Synchronous Rectifier
Broadcast equipment
Active filtering
High current laser/LED systems
3-Phase Motor Inverter Driver
RGB applications
Portable computers
Isolated switch mode power supplies (SMPS)
DC-DC Converters
IRS2330DJTRPBF More Descriptions
Tape & Reel (TR) IRS2330DJPBF Half-Bridge 1996 gate driver 80ns -40C~150C TJ 250mA 500mA 2W
600 V THREE PHASE DRIVER IC W/ INTGR BSF & INTEGR OPERAMPL | Infineon IRS2330DJTRPBF
Surface Mount Tape & Reel (TR) Obsolete EAR99 Gate Drivers ICs Inverting 6 600V V 44-LCC (J-Lead), 32 Leads IRS2330DJPBF Half-Bridge
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode Function. Compatible down to 3.3V Logic. Deadtime 2.0us.
Diodes - Rectifiers - Arrays Schottky TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Surface Mount Small Signal =< 200mA (Io), Any Speed Tape & Reel (TR) 1 Pair Common Cathode 10μA @ 40V 1V @ 40mA DIODE ARRAY SCHOTTKY 40V SOT23
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 44 Lead PLCC package for IGBTs and MOSFETs. Also available in 28 Lead SOICWB. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; Typical deadtime 2 s (IRS2330) or 0.7 s (IRS2332 ); Over-current shutdown turns off all six drivers; Independent half-bridge drivers; Cross-conduction prevention logic; 3.3 V logic compatible; Matched propagation delay for all channels; Outputs out of phase with inputs; Inegrated Operational Amplifier; Integrated Bootstrap Diode function
600 V THREE PHASE DRIVER IC W/ INTGR BSF & INTEGR OPERAMPL | Infineon IRS2330DJTRPBF
Surface Mount Tape & Reel (TR) Obsolete EAR99 Gate Drivers ICs Inverting 6 600V V 44-LCC (J-Lead), 32 Leads IRS2330DJPBF Half-Bridge
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode Function. Compatible down to 3.3V Logic. Deadtime 2.0us.
Diodes - Rectifiers - Arrays Schottky TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Surface Mount Small Signal =< 200mA (Io), Any Speed Tape & Reel (TR) 1 Pair Common Cathode 10μA @ 40V 1V @ 40mA DIODE ARRAY SCHOTTKY 40V SOT23
600 V Three Phase Driver IC with typical 0.25 A source and 0.5 A sink currents in 44 Lead PLCC package for IGBTs and MOSFETs. Also available in 28 Lead SOICWB. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; Typical deadtime 2 s (IRS2330) or 0.7 s (IRS2332 ); Over-current shutdown turns off all six drivers; Independent half-bridge drivers; Cross-conduction prevention logic; 3.3 V logic compatible; Matched propagation delay for all channels; Outputs out of phase with inputs; Inegrated Operational Amplifier; Integrated Bootstrap Diode function
The three parts on the right have similar specifications to IRS2330DJTRPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceHTS CodeSubcategoryMax Power DissipationVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberQualification StatusOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRise / Fall Time (Typ)Interface IC TypeChannel TypeNumber of DriversTurn On TimeDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRoHS StatusFactory Lead TimeJESD-609 CodeTerminal FinishTechnologyNumber of OutputsMax Supply CurrentInput Offset Voltage (Vos)Release TimeBuilt-in ProtectionsRadiation HardeningREACH SVHCLead FreeSeriesView Compare
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IRS2330DJTRPBFSurface MountSurface Mount44-LCC (J-Lead), 32 Leads44-40°C~150°C TJTape & Reel (TR)1996Obsolete3 (168 Hours)44EAR9975Ohm8542.39.00.01MOSFET Drivers2W10V~20VQUADJ BENDNOT SPECIFIED115V1.27mmNOT SPECIFIEDIRS2330DJPBFNot Qualified20V500mA15V4mA2W200mA700 nsInverting50 ns80ns35 ns700 ns80ns 35nsBUFFER OR INVERTER BASED MOSFET DRIVER3-Phase60.7 μsHalf-BridgeIGBT, N-Channel MOSFET250mA 500mAYES0.8V 2.2V0.7 μs600V4.572mm16.6624mm16.6624mmRoHS Compliant--------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996Active2 (1 Year)8EAR99--MOSFET Drivers625mW10V~20VDUALGULL WING-115V--IRS2011SPBF-220V1A15V300μA625mW1A80 nsInverting20 ns40ns35 ns20 ns25ns 15nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent--Half-BridgeN-Channel MOSFET1A 1A-0.8V 2.7V--1.4986mm4.9784mm3.9878mmROHS3 Compliant12 Weekse3Matte Tin (Sn)CMOS2300μA200V60 nsTRANSIENT; UNDER VOLTAGENoNo SVHCLead Free-
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Surface MountSurface Mount16-VFQFN Exposed Pad16-40°C~150°C TJTube2010Obsolete2 (1 Year)-EAR99---2.08W10V~20V-------IRS2001MPBF-15V600mA-150μA2.08W600mA220 nsNon-Inverting50 ns70ns35 ns50 ns70ns 35nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent2-Half-BridgeIGBT, N-Channel MOSFET290mA 600mA-0.8V 2.5V-200V---RoHS Compliant---------NoNo SVHC--
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Surface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996Active1 (Unlimited)-EAR99---828mW10V~18V--NOT SPECIFIED---NOT SPECIFIED---240mA-----Non-Inverting-85ns40 ns-85ns 40nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle--High-SideN-Channel MOSFET160mA 240mA-0.8V 2.2V-200V1.3mm2.9mm1.6mmROHS3 Compliant18 Weeks---1------Lead FreeµHVIC™
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