Infineon Technologies IRS2153DPBF
- Part Number:
- IRS2153DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3254408-IRS2153DPBF
- Description:
- IC DVR HALF BRIDGE SELF OSC 8DIP
- Datasheet:
- IRS2153DPBF
Infineon Technologies IRS2153DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS2153DPBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Operating Temperature-40°C~125°C TJ
- PackagingTube
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- Max Power Dissipation1W
- TechnologyCMOS
- Voltage - Supply10V~15.4V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage14V
- Frequency100kHz
- Base Part NumberIRS2153DPBF
- Number of Outputs2
- Output Voltage625V
- Max Output Current260mA
- Power Supplies14V
- Nominal Supply Current1.8mA
- Power Dissipation1W
- Output Current180mA
- Max Supply Current5mA
- Input TypeRC Input Circuit
- Halogen FreeHalogen Free
- Rise Time120ns
- Fall Time (Typ)80 ns
- Release Time50 ns
- Rise / Fall Time (Typ)120ns 50ns
- Channel TypeSynchronous
- Driven ConfigurationHalf-Bridge
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)180mA 260mA
- Switching Frequency1.1MHz
- Built-in ProtectionsUNDER VOLTAGE
- High Side Voltage - Max (Bootstrap)600V
- Height4.9276mm
- Length10.8966mm
- Width7.11mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRS2153DPBF Overview
The product, IRS2153DPBF, was published in 1996 and has 8 terminations. It utilizes CMOS technology and has a voltage supply range of 10V to 15.4V. The terminal position is dual and the base part number is IRS2153DPBF. The output voltage is 625V and the rise/fall time (typical) is 120ns/50ns. It features an N-channel MOSFET gate type and has built-in protection against under voltage.
IRS2153DPBF Features
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IRS2153DPBF Applications
There are a lot of Infineon Technologies IRS2153DPBF gate drivers applications.
Broadcast equipment
Line drivers
LCD/LCoS/DLP portable and embedded pico projectors
Motor controllers
Pulse transformer drivers
Industrial motor drives - compact, standard, premium, servo drives
Telecom switch mode power supplies
Active Clamp Flyback or Forward and Synchronous Rectifier
Power factor correction (PFC) circuits
High current laser/LED systems
The product, IRS2153DPBF, was published in 1996 and has 8 terminations. It utilizes CMOS technology and has a voltage supply range of 10V to 15.4V. The terminal position is dual and the base part number is IRS2153DPBF. The output voltage is 625V and the rise/fall time (typical) is 120ns/50ns. It features an N-channel MOSFET gate type and has built-in protection against under voltage.
IRS2153DPBF Features
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
IRS2153DPBF Applications
There are a lot of Infineon Technologies IRS2153DPBF gate drivers applications.
Broadcast equipment
Line drivers
LCD/LCoS/DLP portable and embedded pico projectors
Motor controllers
Pulse transformer drivers
Industrial motor drives - compact, standard, premium, servo drives
Telecom switch mode power supplies
Active Clamp Flyback or Forward and Synchronous Rectifier
Power factor correction (PFC) circuits
High current laser/LED systems
IRS2153DPBF More Descriptions
Driver 600V 0.26A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin PDIP Tube
Tube IRS2153DPBF Half-Bridge 1996 gate driver 120ns -40C~125C TJ 180mA 260mA 1W
Power MOSFET and IGBT Driver, Self-Oscillating 1/2 Bridge, 600V, 8-pin PDIP, TubeAvnet Japan
Self-Oscillating Half Bridge Driver, 1.1us Deadtime in a 8-pin DIP package.
IRS2153 Series 600 V 180 mA 15.4 V Supply Dual Half Bridge Driver - PDIP-8
600 V half-bridge gate driver IC with oscillator, integrated bootstrap FET, programmable frequency and programmable shutdown, PDIP8, RoHSInfineon SCT
MOSFET Driver IC; Device Type:High-Side; No. of Outputs:2; Output Voltage:625.3V; Output Current:260mA; Power Dissipation, Pd:1W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:Through Hole; Package/Case:8-DIP ;RoHS Compliant: Yes
HALF BRIDGE DRIVER SELF-OSC, DIP8; No. of Outputs:2; Output Current:180mA; Output Voltage:625.3V; Supply Voltage Range:10.1V to 16.8V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2153; Device Type:MOSFET; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current Max:0.18A; Output Voltage Max:625V; Package / Case:DIP; Supply Voltage Max:16.8V; Supply Voltage Min:10.1V; Termination Type:Through Hole
Self-Oscillating 600 V Half Bridge Driver IC with typical 0.18 A source and 0.26 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Integrated 600 V half-bridge gate driver; CT, RT programmable oscillator; 15.4 V Zener clamp on VCC; Micropower startup; Non-latched shutdown on CT pin (1/6th VCC); Internal bootstrap FET; /- 50 V/ns dV/dt immunity; Internal deadtime; Typical deadtime 1.1 s (IRS2153D) or 0.6 s (IRS21531D)
Tube IRS2153DPBF Half-Bridge 1996 gate driver 120ns -40C~125C TJ 180mA 260mA 1W
Power MOSFET and IGBT Driver, Self-Oscillating 1/2 Bridge, 600V, 8-pin PDIP, TubeAvnet Japan
Self-Oscillating Half Bridge Driver, 1.1us Deadtime in a 8-pin DIP package.
IRS2153 Series 600 V 180 mA 15.4 V Supply Dual Half Bridge Driver - PDIP-8
600 V half-bridge gate driver IC with oscillator, integrated bootstrap FET, programmable frequency and programmable shutdown, PDIP8, RoHSInfineon SCT
MOSFET Driver IC; Device Type:High-Side; No. of Outputs:2; Output Voltage:625.3V; Output Current:260mA; Power Dissipation, Pd:1W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:Through Hole; Package/Case:8-DIP ;RoHS Compliant: Yes
HALF BRIDGE DRIVER SELF-OSC, DIP8; No. of Outputs:2; Output Current:180mA; Output Voltage:625.3V; Supply Voltage Range:10.1V to 16.8V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2153; Device Type:MOSFET; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current Max:0.18A; Output Voltage Max:625V; Package / Case:DIP; Supply Voltage Max:16.8V; Supply Voltage Min:10.1V; Termination Type:Through Hole
Self-Oscillating 600 V Half Bridge Driver IC with typical 0.18 A source and 0.26 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC. | Summary of Features: Integrated 600 V half-bridge gate driver; CT, RT programmable oscillator; 15.4 V Zener clamp on VCC; Micropower startup; Non-latched shutdown on CT pin (1/6th VCC); Internal bootstrap FET; /- 50 V/ns dV/dt immunity; Internal deadtime; Typical deadtime 1.1 s (IRS2153D) or 0.6 s (IRS21531D)
The three parts on the right have similar specifications to IRS2153DPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageFrequencyBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentInput TypeHalogen FreeRise TimeFall Time (Typ)Release TimeRise / Fall Time (Typ)Channel TypeDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Switching FrequencyBuilt-in ProtectionsHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeJESD-609 CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Qualification StatusPropagation DelayTurn On Delay TimeTurn-Off Delay TimeInterface IC TypeNumber of DriversLogic Voltage - VIL, VIHOutput Current Flow DirectionSeriesView Compare
-
IRS2153DPBF12 WeeksThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8-40°C~125°C TJTube1996Active1 (Unlimited)8EAR99MOSFET Drivers1WCMOS10V~15.4VDUAL114V100kHzIRS2153DPBF2625V260mA14V1.8mA1W180mA5mARC Input CircuitHalogen Free120ns80 ns50 ns120ns 50nsSynchronousHalf-BridgeN-Channel MOSFET180mA 260mA1.1MHzUNDER VOLTAGE600V4.9276mm10.8966mm7.11mmNoNo SVHCROHS3 CompliantLead Free---------------
-
-Surface MountSurface Mount14-SOIC (0.154, 3.90mm Width)14-40°C~150°C TJTube1996Obsolete2 (1 Year)14EAR99Peripheral Drivers1WCMOS10V~20VDUAL-14V-IRS210614SPBF-20V600mA-120μA1W--Non-Inverting-100ns35 ns-100ns 35nsIndependentHalf-BridgeIGBT, N-Channel MOSFET290mA 600mA--600V1.5mm8.74mm3.99mm-No SVHCRoHS CompliantLead Freee3Tin (Sn)GULL WING26030Not Qualified230 ns230 ns230 nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER20.8V 2.5VSOURCE SINK-
-
-Surface MountSurface Mount16-VFQFN Exposed Pad16-40°C~150°C TJTube2010Obsolete2 (1 Year)-EAR99-2.08W-10V~20V----IRS2001MPBF-15V600mA-150μA2.08W600mA-Non-Inverting-70ns35 ns-70ns 35nsIndependentHalf-BridgeIGBT, N-Channel MOSFET290mA 600mA--200V---NoNo SVHCRoHS Compliant-------220 ns50 ns50 nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER20.8V 2.5V--
-
18 WeeksSurface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996Active1 (Unlimited)-EAR99-828mW-10V~18V-----1-240mA-----Non-Inverting-85ns40 ns-85ns 40nsSingleHigh-SideN-Channel MOSFET160mA 240mA--200V1.3mm2.9mm1.6mm--ROHS3 CompliantLead Free---NOT SPECIFIEDNOT SPECIFIED----BUFFER OR INVERTER BASED MOSFET DRIVER-0.8V 2.2V-µHVIC™
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 September 2023
LM301AN Operational Amplifier: Equivalent, Circuit and Package
Ⅰ. What is LM301AN?Ⅱ. Symbol, footprint and pin connection of LM301ANⅢ. Technical parametersⅣ. LM301AN tone control circuitⅤ. Features of LM301ANⅥ. What is the difference between LM301AN and LM709?Ⅶ.... -
25 September 2023
Get to Know the IRFB7545PBF Power MOSFET
Ⅰ. What is IRFB7545PBF?Ⅱ. Symbol and Footprint of IRFB7545PBFⅢ. Technical parametersⅣ. Features of IRFB7545PBFⅤ. Pinout and package of IRFB7545PBFⅥ. Application of IRFB7545PBFⅦ. How to use IRFB7545PBF?Ⅷ. How to... -
25 September 2023
A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors
Ⅰ. What is a MOS field effect transistor?Ⅱ. Overview of 2N7000Ⅲ. Overview of BS170Ⅳ. 2N7000 vs BS170: PCB footprintsⅤ. 2N7000 vs BS170: Technical parametersⅥ. 2N7000 vs BS170: FeaturesⅦ.... -
26 September 2023
W25Q128JVSIQ Footprint, Features and Package
Ⅰ. W25Q128JVSIQ descriptionⅡ. W25Q128JVSIQ symbol and footprintⅢ. Technical parametersⅣ. Features of W25Q128JVSIQⅤ. Pin configuration of W25Q128JVSIQⅥ. Package of W25Q128JVSIQⅦ. What are the characteristics of the SPI interface of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.