Infineon Technologies IRG7T200CL12B

Name: IRG7T200CL12B
Brand: Infineon Technologies
SKU: 3072033-IRG7T200CL12B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG7T200CL12B

Manufacturer:: Infineon Technologies

Ventron No:: 3072033-IRG7T200CL12B

Description:: MOD IGBT 1200V 200A POWIR 62

ECAD Model:

Datasheet:: IRG7T200CL12B

Specifications

Infineon Technologies IRG7T200CL12B technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7T200CL12B.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.06kW
Configuration
Single
Power - Max
1060W
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
390A
Current - Collector Cutoff (Max)
2mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
22.5nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 200A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
22.5nF @ 25V
RoHS Status
RoHS Compliant

Description

IRG7T200CL12B Description IRG7T200CL12B transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7T200CL12B MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration. IRG7T200CL12B Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging IRG7T200CL12B Applications ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display

IRG7T200CL12B More Descriptions

MOD IGBT 1200V 200A POWIR 62

Certification