Infineon Technologies IRFL4310TRPBF
- Part Number:
- IRFL4310TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2478573-IRFL4310TRPBF
- Description:
- MOSFET N-CH 100V 1.6A SOT223
- Datasheet:
- IRFL4310TRPBF
Infineon Technologies IRFL4310TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFL4310TRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1999
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance200mOhm
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1.6A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.1W
- Case ConnectionDRAIN
- Turn On Delay Time7.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs200m Ω @ 1.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Rise Time18ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time34 ns
- Continuous Drain Current (ID)1.6A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)2.2A
- Drain to Source Breakdown Voltage100V
- Recovery Time110 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs4 V
- Min Breakdown Voltage100V
- Height1.8mm
- Length6.6802mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFL4310TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 330pF @ 25V.This device conducts a continuous drain current (ID) of 1.6A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2.2A.When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFL4310TRPBF Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 34 ns
a threshold voltage of 2V
IRFL4310TRPBF Applications
There are a lot of Infineon Technologies
IRFL4310TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 330pF @ 25V.This device conducts a continuous drain current (ID) of 1.6A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2.2A.When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFL4310TRPBF Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 34 ns
a threshold voltage of 2V
IRFL4310TRPBF Applications
There are a lot of Infineon Technologies
IRFL4310TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFL4310TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS /-20V;-55
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
Trans MOSFET N-CH 100V 2.2A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
IRFL4310TRPBF,MOSFET, 100V, 1. 6A, 200 MOHM, 17 NC QG, SOT-2
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. Of Pins:4Pins Rohs Compliant: Yes |Infineon IRFL4310TRPBF.
MOSFET, N CH, 100V, 1.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
Trans MOSFET N-CH 100V 2.2A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
IRFL4310TRPBF,MOSFET, 100V, 1. 6A, 200 MOHM, 17 NC QG, SOT-2
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. Of Pins:4Pins Rohs Compliant: Yes |Infineon IRFL4310TRPBF.
MOSFET, N CH, 100V, 1.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
12 September 2023
The Difference Between L293D and L298N
In this article we will explore the main differences between the L293D and L298N motor drivers. Both motor drives have their own unique features and applications. Understanding the... -
12 September 2023
Comprehensive Analysis of CR123A battery: Features, Applications and Purchase
Ⅰ. CR123A overviewThe CR123A battery, classified under the non-rechargeable (primary) category, is a high-performance power source with distinct specifications. Featuring a robust lithium manganese composition, it boasts a... -
13 September 2023
AT89S52-24PU Microcontroller Equivalent, Features and Working Principle
Ⅰ. AT89S52-24PU overviewAT89S52 is a low-voltage, high-performance 8-bit CMOS microcontroller with 8K bytes of in-circuit programmable flash memory (ISP). AT89S52 is a high-density non-volatile memory compatible with the... -
13 September 2023
The Difference Between CR2016 and CR2032 Button Batteries
Although CR2032 and CR2016 batteries are common coin-type batteries with similar appearance and the same voltage, they have obvious differences in power capacity and size. Below we will...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.