IRFL4310TRPBF

Infineon Technologies IRFL4310TRPBF

Part Number:
IRFL4310TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478573-IRFL4310TRPBF
Description:
MOSFET N-CH 100V 1.6A SOT223
ECAD Model:
Datasheet:
IRFL4310TRPBF

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Specifications
Infineon Technologies IRFL4310TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFL4310TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1999
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    200mOhm
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1.6A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.1W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    200m Ω @ 1.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Rise Time
    18ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    34 ns
  • Continuous Drain Current (ID)
    1.6A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2.2A
  • Drain to Source Breakdown Voltage
    100V
  • Recovery Time
    110 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    4 V
  • Min Breakdown Voltage
    100V
  • Height
    1.8mm
  • Length
    6.6802mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFL4310TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 330pF @ 25V.This device conducts a continuous drain current (ID) of 1.6A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2.2A.When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFL4310TRPBF Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 34 ns
a threshold voltage of 2V


IRFL4310TRPBF Applications
There are a lot of Infineon Technologies
IRFL4310TRPBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFL4310TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS /-20V;-55
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
Trans MOSFET N-CH 100V 2.2A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
IRFL4310TRPBF,MOSFET, 100V, 1. 6A, 200 MOHM, 17 NC QG, SOT-2
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. Of Pins:4Pins Rohs Compliant: Yes |Infineon IRFL4310TRPBF.
MOSFET, N CH, 100V, 1.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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