Vishay Siliconix IRFD9120PBF
- Part Number:
- IRFD9120PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478748-IRFD9120PBF
- Description:
- MOSFET P-CH 100V 1A 4-DIP
- Datasheet:
- IRFD9120PBF
Vishay Siliconix IRFD9120PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD9120PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance600mOhm
- Additional FeatureAVALANCHE RATED
- Voltage - Rated DC-100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Current Rating-1A
- Pin Count4
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Case ConnectionDRAIN
- Turn On Delay Time9.6 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs600m Ω @ 600mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds390pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1A Ta
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time29ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)-1A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)1A
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)8A
- Recovery Time200 ns
- Nominal Vgs-4 V
- Height3.3782mm
- Length6.2738mm
- Width5.0038mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFD9120PBF Overview
The maximum input capacitance of this device is 390pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.As shown in the table below, the drain current of this device is 1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFD9120PBF Features
a continuous drain current (ID) of -1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 8A.
a threshold voltage of -4V
IRFD9120PBF Applications
There are a lot of Vishay Siliconix
IRFD9120PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 390pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.As shown in the table below, the drain current of this device is 1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFD9120PBF Features
a continuous drain current (ID) of -1A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 8A.
a threshold voltage of -4V
IRFD9120PBF Applications
There are a lot of Vishay Siliconix
IRFD9120PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFD9120PBF More Descriptions
Single P-Channel 100 V 0.6 Ohms Through Hole Power Mosfet - HVMDIP-4
MOSFET P-CH 100V 1A 4-DIP | Siliconix / Vishay IRFD9120PBF
P Channel Mosfet, -100V, 1A, Hd-1; Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; On Resistance Rds(On):0.6Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1A; Current Temperature:25°C; Device Marking:IRFD9120PBF; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:8A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
MOSFET P-CH 100V 1A 4-DIP | Siliconix / Vishay IRFD9120PBF
P Channel Mosfet, -100V, 1A, Hd-1; Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; On Resistance Rds(On):0.6Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1A; Current Temperature:25°C; Device Marking:IRFD9120PBF; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:8A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
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