IRFD014PBF

Vishay Siliconix IRFD014PBF

Part Number:
IRFD014PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2848706-IRFD014PBF
Description:
MOSFET N-CH 60V 1.7A 4-DIP
ECAD Model:
Datasheet:
IRFD014PBF

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Specifications
Vishay Siliconix IRFD014PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD014PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-DIP (0.300, 7.62mm)
  • Number of Pins
    4
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    200mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    200mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    310pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 10V
  • Rise Time
    50ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    1.7A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance
    310pF
  • Recovery Time
    140 ns
  • Drain to Source Resistance
    200mOhm
  • Rds On Max
    200 mΩ
  • Height
    3.3782mm
  • Length
    6.2738mm
  • Width
    5.0038mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFD014PBF Overview
A device's maximal input capacitance is 310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 200mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFD014PBF Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)


IRFD014PBF Applications
There are a lot of Vishay Siliconix
IRFD014PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFD014PBF More Descriptions
Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - HVMDIP-4
IRFD014PBF N-channel MOSFET Transistor, 1.7 A, 60 V, 4-Pin HVMDIP | Siliconix / Vishay IRFD014PBF
MOSFET Operating temperature: -55...175 °C Housing type: HEXDIP Polarity: N Power dissipation: 1.3 W
Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP
N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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