Vishay Siliconix IRFD014PBF
- Part Number:
- IRFD014PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848706-IRFD014PBF
- Description:
- MOSFET N-CH 60V 1.7A 4-DIP
- Datasheet:
- IRFD014PBF
Vishay Siliconix IRFD014PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFD014PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-DIP (0.300, 7.62mm)
- Number of Pins4
- Supplier Device Package4-DIP, Hexdip, HVMDIP
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance200mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Power Dissipation1.3W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds310pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.7A Ta
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time50ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)1.7A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Input Capacitance310pF
- Recovery Time140 ns
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- Height3.3782mm
- Length6.2738mm
- Width5.0038mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFD014PBF Overview
A device's maximal input capacitance is 310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 200mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFD014PBF Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFD014PBF Applications
There are a lot of Vishay Siliconix
IRFD014PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 310pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 200mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFD014PBF Features
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFD014PBF Applications
There are a lot of Vishay Siliconix
IRFD014PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFD014PBF More Descriptions
Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - HVMDIP-4
IRFD014PBF N-channel MOSFET Transistor, 1.7 A, 60 V, 4-Pin HVMDIP | Siliconix / Vishay IRFD014PBF
MOSFET Operating temperature: -55...175 °C Housing type: HEXDIP Polarity: N Power dissipation: 1.3 W
Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP
N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
IRFD014PBF N-channel MOSFET Transistor, 1.7 A, 60 V, 4-Pin HVMDIP | Siliconix / Vishay IRFD014PBF
MOSFET Operating temperature: -55...175 °C Housing type: HEXDIP Polarity: N Power dissipation: 1.3 W
Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP
N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
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