IRF9640PBF

Vishay Siliconix IRF9640PBF

Part Number:
IRF9640PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479868-IRF9640PBF
Description:
MOSFET P-CH 200V 11A TO-220AB
ECAD Model:
Datasheet:
IRF9640, SiHF9640

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Specifications
Vishay Siliconix IRF9640PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9640PBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    500mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -11A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    500mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 10V
  • Rise Time
    43ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    38 ns
  • Turn-Off Delay Time
    39 ns
  • Continuous Drain Current (ID)
    -11A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -200V
  • Input Capacitance
    1.2nF
  • Recovery Time
    300 ns
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Resistance
    500mOhm
  • Rds On Max
    500 mΩ
  • Nominal Vgs
    -4 V
  • Height
    19.89mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF9640PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.This device conducts a continuous drain current (ID) of -11A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 39 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 500mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF9640PBF Features
a continuous drain current (ID) of -11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)


IRF9640PBF Applications
There are a lot of Vishay Siliconix
IRF9640PBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF9640PBF More Descriptions
IRF9640 Series 200 V 0.5 Ohms Single P-Channel Power Mosfet - TO-220AB
MOSFET P-CH 200V 11A TO-220AB | Siliconix / Vishay IRF9640PBF
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P CHANNEL MOSFET, -200V, -11A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
MOSFET, P, -200V, -11A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:200V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:-11A; Current Temperature:25°C; Device Marking:IRF9640; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:-200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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