Vishay Siliconix IRF9640PBF
- Part Number:
- IRF9640PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479868-IRF9640PBF
- Description:
- MOSFET P-CH 200V 11A TO-220AB
- Datasheet:
- IRF9640, SiHF9640
Vishay Siliconix IRF9640PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9640PBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance500mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-11A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Rise Time43ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)38 ns
- Turn-Off Delay Time39 ns
- Continuous Drain Current (ID)-11A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-200V
- Input Capacitance1.2nF
- Recovery Time300 ns
- Max Junction Temperature (Tj)150°C
- Drain to Source Resistance500mOhm
- Rds On Max500 mΩ
- Nominal Vgs-4 V
- Height19.89mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF9640PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.This device conducts a continuous drain current (ID) of -11A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 39 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 500mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF9640PBF Features
a continuous drain current (ID) of -11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)
IRF9640PBF Applications
There are a lot of Vishay Siliconix
IRF9640PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.This device conducts a continuous drain current (ID) of -11A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 39 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 500mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF9640PBF Features
a continuous drain current (ID) of -11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)
IRF9640PBF Applications
There are a lot of Vishay Siliconix
IRF9640PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF9640PBF More Descriptions
IRF9640 Series 200 V 0.5 Ohms Single P-Channel Power Mosfet - TO-220AB
MOSFET P-CH 200V 11A TO-220AB | Siliconix / Vishay IRF9640PBF
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P CHANNEL MOSFET, -200V, -11A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
MOSFET, P, -200V, -11A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:200V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:-11A; Current Temperature:25°C; Device Marking:IRF9640; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:-200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
MOSFET P-CH 200V 11A TO-220AB | Siliconix / Vishay IRF9640PBF
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P CHANNEL MOSFET, -200V, -11A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
MOSFET, P, -200V, -11A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:200V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:-11A; Current Temperature:25°C; Device Marking:IRF9640; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:-200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 March 2024
TDA7377 Audio Power Amplifier Alternatives, Application and Other Details
Ⅰ. Overview of TDA7377Ⅱ. Performance evaluation of TDA7377Ⅲ. Internal circuit diagram of TDA7377Ⅳ. Application of TDA7377Ⅴ. PCB-layout grounding of TDA7377Ⅵ. TDA7377 power amplifier chip parametersⅦ. How to ensure... -
19 March 2024
HT1621B Alternatives, Brand, Usage and Other Details
Ⅰ. Overview of HT1621BⅡ. Which brand is HT1621B?Ⅲ. Pins and description of HT1621BⅣ. How to use HT1621B?Ⅴ. Application circuits of HT1621BⅥ. Tips for using HT1621BⅦ. How to set... -
19 March 2024
AT24C02 Pinout, Working Principle, Characteristics and More
Ⅰ. AT24C02 overviewⅡ. Working principle of AT24C02Ⅲ. Pins and functions of AT24C02Ⅳ. Characteristics of AT24C02Ⅴ. Block diagram of AT24C02Ⅵ. What should we pay attention to when using AT24C02?Ⅶ.... -
20 March 2024
L9110S Advantages, Pinout, Working Principle and Application
Ⅰ. L9110S overviewⅡ. Advantages of L9110SⅢ. L9110S pin configurationⅣ. Hardware introduction of L9110S motor drive moduleⅤ. Working principle of L9110S motor drive moduleⅥ. L9110S application circuitⅦ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.