Infineon Technologies IRF6623TRPBF

IRF6623TRPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 43 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1360pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 55mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.2V, which means that it will not activate any of its functions when its threshold voltage reaches 2.2V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IRF6623TRPBF Features
the avalanche energy rating (Eas) is 43 mJ
a continuous drain current (ID) of 55mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
a threshold voltage of 2.2V


IRF6623TRPBF Applications
There are a lot of Infineon Technologies
IRF6623TRPBF applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies