Infineon Technologies IRF6215STRLPBF
- Part Number:
- IRF6215STRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2485049-IRF6215STRLPBF
- Description:
- MOSFET P-CH 150V 13A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF6215STRLPBF
Infineon Technologies IRF6215STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6215STRLPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1998
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance290mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC-150V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-13A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max3.8W Ta 110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs290m Ω @ 6.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
- Rise Time36ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)37 ns
- Turn-Off Delay Time53 ns
- Continuous Drain Current (ID)-13A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-150V
- Pulsed Drain Current-Max (IDM)44A
- Dual Supply Voltage150V
- Nominal Vgs-4 V
- Height4.826mm
- Length10.668mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRF6215STRLPBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when combined with the high switching speed and ruggedized device design of HEXFET Power MOSFETs, offers the designer with an exceptionally efficient and dependable device for usage in a wide range of applications.
IRF6215STRLPBF Features
?Lead-Free
?Technology for Advanced Processes
?Surface Installation (IRF6215S)
?Through-hole with a low profile (IRF6215L)
?Operating Temperature: 175°C
?Quick Switching
IRF6215STRLPBF Applications
Switching applications
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when combined with the high switching speed and ruggedized device design of HEXFET Power MOSFETs, offers the designer with an exceptionally efficient and dependable device for usage in a wide range of applications.
IRF6215STRLPBF Features
?Lead-Free
?Technology for Advanced Processes
?Surface Installation (IRF6215S)
?Through-hole with a low profile (IRF6215L)
?Operating Temperature: 175°C
?Quick Switching
IRF6215STRLPBF Applications
Switching applications
IRF6215STRLPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS /-20V
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 150 V 0.58 Ohm 66 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
IRF6215STRLPBF,MOSFET, P-CHANN EL, -150V, -13A, 290 MOHM, 44
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -150V, 13A D2-PAK; Tra; P CHANNEL MOSFET, -150V, 13A D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V
Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:110W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF6215STRLPBF.
MOSFET, P-CH, -150V, -13A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 150 V 0.58 Ohm 66 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
IRF6215STRLPBF,MOSFET, P-CHANN EL, -150V, -13A, 290 MOHM, 44
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -150V, 13A D2-PAK; Tra; P CHANNEL MOSFET, -150V, 13A D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V
Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:110W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF6215STRLPBF.
MOSFET, P-CH, -150V, -13A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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