Infineon Technologies IR2151S
- Part Number:
- IR2151S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3257236-IR2151S
- Description:
- IC DRVR HALF BRDG SELF-OSC 8SOIC
- Datasheet:
- IR2151S
Description
The IR2151 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal dead time designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts.
Features
Floating channel designed for bootstrap operation
Fully operational to 600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency: 11.4x(RT 750Ω)CT
Matched propagation delay for both channels
Low side output in phase with R
Applications
Motor control
Uninterruptible power supplies (UPS)
Power inverters
Switch mode power supplies (SMPS)
DC-DC converters
The IR2151 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal dead time designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts.
Features
Floating channel designed for bootstrap operation
Fully operational to 600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
Programmable oscillator frequency: 11.4x(RT 750Ω)CT
Matched propagation delay for both channels
Low side output in phase with R
Applications
Motor control
Uninterruptible power supplies (UPS)
Power inverters
Switch mode power supplies (SMPS)
DC-DC converters
Infineon Technologies IR2151S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR2151S.
- MountSurface Mount
- Package / CaseSOIC
- Published2001
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)2
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature125°C
- Min Operating Temperature-40°C
- SubcategoryMOSFET Drivers
- TechnologyCMOS
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Number of Functions1
- Supply Voltage12V
- Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Number of Outputs2
- Qualification StatusNot Qualified
- Temperature GradeAUTOMOTIVE
- Output CharacteristicsTOTEM-POLE
- Output PolarityINVERTED
- Input CharacteristicsSCHMITT TRIGGER
- Interface IC TypeHALF BRIDGE BASED MOSFET DRIVER
- Output Peak Current Limit-Nom0.25A
- Supply Voltage1-Nom12V
- High Side DriverYES
- Height Seated (Max)1.75mm
- Length4.9mm
- Width3.9mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
The three parts on the right have similar specifications to IR2151S.
-
ImagePart NumberManufacturerMountPackage / CasePublishedJESD-609 CodeMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of OutputsQualification StatusTemperature GradeOutput CharacteristicsOutput PolarityInput CharacteristicsInterface IC TypeOutput Peak Current Limit-NomSupply Voltage1-NomHigh Side DriverHeight Seated (Max)LengthWidthRoHS StatusLead FreeMounting TypeOperating TemperaturePackagingPart StatusVoltage - SupplyBase Part NumberInput TypeRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)Supplier Device PackageFactory Lead TimeNumber of PinsTerminationMax Power DissipationOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayTurn On Delay TimeMax Output VoltageRise TimeFall Time (Typ)Turn-Off Delay TimeMin Output VoltageHeightRadiation HardeningREACH SVHCView Compare
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IR2151SSurface MountSOIC2001e028EAR99Tin/Lead (Sn/Pb)125°C-40°CMOSFET DriversCMOSDUALGULL WING245112V308R-PDSO-G82Not QualifiedAUTOMOTIVETOTEM-POLEINVERTEDSCHMITT TRIGGERHALF BRIDGE BASED MOSFET DRIVER0.25A12VYES1.75mm4.9mm3.9mmNon-RoHS CompliantContains Lead--------------------------------------
-
-8-DIP (0.300, 7.62mm)2000-1 (Unlimited)----------------------------Non-RoHS Compliant-Through Hole-40°C~150°C TJTubeObsolete10V~20VIR2107Inverting150ns 50nsIndependent2Half-BridgeIGBT, N-Channel MOSFET200mA 350mA0.8V 2.7V600V----------------------
-
-14-SOIC (0.154, 3.90mm Width)2000-1 (Unlimited)----------------------------Non-RoHS Compliant-Surface Mount-40°C~150°C TJTubeObsolete10V~20VIR21074SInverting150ns 50nsIndependent2Half-BridgeIGBT, N-Channel MOSFET200mA 350mA0.8V 2.7V600V14-SOIC---------------------
-
Through Hole8-DIP (0.300, 7.62mm)1996-1 (Unlimited)8EAR99---MOSFET DriversCMOSDUAL--115V---2------0.36A-YES-10.8966mm7.11mmROHS3 CompliantLead FreeThrough Hole-40°C~150°C TJTubeActive10V~20VIR2101PBFNon-Inverting100ns 50nsIndependent-Half-BridgeIGBT, N-Channel MOSFET210mA 360mA0.8V 3V600V-12 Weeks8Through Hole1W620V360mA15V270μA1W210mA270μA220 ns50 ns20V170ns90 ns150 ns10V4.9276mmNoNo SVHC
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