Infineon Technologies IR21368PBF

Name: IR21368PBF
Brand: Infineon Technologies
SKU: 3256043-IR21368PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IR21368PBF

Manufacturer:: Infineon Technologies

Ventron No:: 3256043-IR21368PBF

Description:: IC DRIVER 3PHASE 600V 28DIP

ECAD Model:

Datasheet:: IR21368PBF

Specifications

Infineon Technologies IR21368PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IR21368PBF.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
28-DIP (0.600, 15.24mm)
Number of Pins
28
Supplier Device Package
28-PDIP
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
100Ohm
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.5W
Voltage - Supply
10V~20V
Base Part Number
IR21368PBF
Number of Outputs
6
Output Voltage
300mV
Max Output Current
350mA
Max Supply Voltage
20V
Min Supply Voltage
10V
Nominal Supply Current
120μA
Power Dissipation
1.5W
Output Current
200mA
Input Type
Inverting
Turn On Delay Time
550 ns
Rise Time
190ns
Fall Time (Typ)
75 ns
Turn-Off Delay Time
550 ns
Rise / Fall Time (Typ)
125ns 50ns
Channel Type
3-Phase
Number of Drivers
6
Driven Configuration
Half-Bridge
Gate Type
IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)
200mA 350mA
Logic Voltage - VIL, VIH
0.8V 2.5V
High Side Voltage - Max (Bootstrap)
600V
Height
5.969mm
Length
39.7256mm
Width
14.732mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IR21368PBF Overview
This product features 28 pins and is packaged in a tube for convenience and protection. It has a maximum operating temperature of 125°C, allowing for reliable use in high-temperature environments. With a maximum power dissipation of 1.5W and a maximum output current of 350mA, this product offers powerful performance. Its fall time of 75 ns (typical) ensures efficient and fast operation. With 6 drivers included, this product is capable of driving multiple loads. The high side voltage, with a maximum of 600V (bootstrap), makes it suitable for a wide range of applications. Please note that this product does not have radiation hardening capabilities.

IR21368PBF Features
Embedded in the Tube package
6 drivers
Employing a gate type of IGBT, N-Channel MOSFET
28 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.5W
Resistance of 100Ohm

IR21368PBF Applications
There are a lot of Infineon Technologies IR21368PBF gate drivers applications.

Motor Controls
Motor controllers
Line drivers
High-voltage isolated DC-DC converters
Active filtering
White Goods - Air Conditioner, Washing Machine,
Uninterruptible Power Supplies (UPS)
Welding
Industrial Power Supplies
Automotive Applications

IR21368PBF More Descriptions

Tube IR21368PBF Half-Bridge 2008 gate driver 190ns 125C 200mA 350mA 1.5W
MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin PDIP W
MOSFET Driver IC; Device Type:Bridge; No. of Outputs:6; Output Voltage:620V; Output Current:350mA; Power Dissipation, Pd:1.5W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:Through Hole; Package/Case:28-DIP ;RoHS Compliant: Yes
The IR2136/IR21362/IR21363/IR21365/IR21366/IR21367/IR21368(J&S) are high votage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or under voltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts.

Product Comparison

The three parts on the right have similar specifications to IR21368PBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Voltage - Supply

Base Part Number

Number of Outputs

Output Voltage

Max Output Current

Max Supply Voltage

Min Supply Voltage

Nominal Supply Current

Power Dissipation

Output Current

Input Type

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Rise / Fall Time (Typ)

Channel Type

Number of Drivers

Driven Configuration

Gate Type

Current - Peak Output (Source, Sink)

Logic Voltage - VIL, VIH

High Side Voltage - Max (Bootstrap)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Output Characteristics

Output Polarity

Input Characteristics

Output Peak Current Limit-Nom

High Side Driver

Height Seated (Max)

View Compare
IR21368PBF

Infineon Technologies

Through Hole

Through Hole

28-DIP (0.600, 15.24mm)

28

28-PDIP

-40°C~150°C TJ

Tube

2008

Obsolete

1 (Unlimited)

100Ohm

125°C

-40°C

1.5W

10V~20V

IR21368PBF

6

300mV

350mA

20V

10V

120μA

1.5W

200mA

Inverting

550 ns

190ns

75 ns

550 ns

125ns 50ns

3-Phase

6

Half-Bridge

IGBT, N-Channel MOSFET

200mA 350mA

0.8V 2.5V

600V

5.969mm

39.7256mm

14.732mm

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IR2107

Infineon Technologies

-

Through Hole

8-DIP (0.300, 7.62mm)

-

-

-40°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

-

-

-

-

10V~20V

IR2107

-

-

-

-

-

-

-

-

Inverting

-

-

-

-

150ns 50ns

Independent

2

Half-Bridge

IGBT, N-Channel MOSFET

200mA 350mA

0.8V 2.7V

600V

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IR21368PBF vs IR2107
IR21074S

Infineon Technologies

-

Surface Mount

14-SOIC (0.154, 3.90mm Width)

-

14-SOIC

-40°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

-

-

-

-

10V~20V

IR21074S

-

-

-

-

-

-

-

-

Inverting

-

-

-

-

150ns 50ns

Independent

2

Half-Bridge

IGBT, N-Channel MOSFET

200mA 350mA

0.8V 2.7V

600V

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IR21368PBF vs IR21074S
IR2104S

Infineon Technologies

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-40°C~150°C TJ

Tube

1996

Obsolete

1 (Unlimited)

-

-

-

-

10V~20V

IR2104S

-

-

-

-

-

-

-

-

Non-Inverting

-

-

-

-

100ns 50ns

Synchronous

2

Half-Bridge

IGBT, N-Channel MOSFET

210mA 360mA

0.8V 3V

600V

-

4.9mm

3.9mm

-

Non-RoHS Compliant

-

YES

8

EAR99

CMOS

DUAL

GULL WING

NOT SPECIFIED

1

15V

NOT SPECIFIED

R-PDSO-G8

Not Qualified

TOTEM-POLE

TRUE

SCHMITT TRIGGER

0.36A

YES

1.75mm

IR21368PBF vs IR2104S