Infineon Technologies IR2110STRPBF

500 V high-side and low-side gate driver IC with shutdown, SOIC 16W, RoHSInfineon SCT
Tape & Reel (TR) IR2110SPBF Half-Bridge 1996 gate driver 25ns 17ns -40C~150C TJ 2A 2A 6V 9.5V
IR# IR2110STRPBF, MOSFETDRVR 500V 2.5A 2-OUT HI/LO SIDE NON-INV, 16-PIN SOIC W T/R, ROHS
IR2110S Series Dual 20V Surface Mount High and Low Side Driver - SOIC-16
Surface Mount Tape & Reel (TR) Active EAR99 Gate Drivers ICs Non-Inverting 2 500V V 16-SOIC (0.295, 7.50mm Width) IR2110SPBF Half-Bridge
High Low Side Non-Inverting MOSFET and IGBT Driver; Vmax 500V; Io /Io- 2A/2A; tON/OFF 120/94ns; 10V~20V; -40°C ~ 125°C; ; Equivalent: IR2110SPBF; IR2110STRPBF;
Drivers IC; Device Type:High and Low Side; Supply Voltage Max:20V; Termination Type:SMD; Package/Case:16-SOIC; No. of Pins:16; Operating Temperature Range:-40°C to 125°C; IC Generic Number:2110; Operating Temp. Max:125°C ;RoHS Compliant: Yes
Type = Half Bridge / Outputs = 2 / Rise Time ns = 25 / Fall Time ns = 17 / Output Current A = 2 / Supply Voltage Min. V = 10 / Supply Voltage Max. V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 125 / Package Type = SOIC-16 / Pins = 16 / Mounting Type = SMD / MSL = Level-3 / Packaging = Tape & Reel / Length mm = 10.5 / Width mm = 7.6 / Height mm = 2.6 / Reflow Temperature Max. °C = 300
500 V High and Low Side Driver IC with typical 2.5 A source and 2.5 A sink currents in 16 Lead SOICWB package for IGBTs and MOSFETs. Also available in 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to 500 V; Fully operational to 600 V verstion available (IR2113; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V logic compatible; Separate logic supply range from 3.3 V to 20 V; Logic and power ground /- 5 V offset; CMOS Schmitt-triggered inputs with pull-down; Cycle by cycle edge-triggered shutdown logic; Matched propagation delay for both channels; Outputs in phase with inputs
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.