Rohm Semiconductor IMX1T110
- Part Number:
- IMX1T110
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3584680-IMX1T110
- Description:
- TRANS 2NPN 50V 0.15A 6SMT
- ECAD Model:
-
- Datasheet:
- IMX1T110
Rohm Semiconductor IMX1T110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMX1T110.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC50V
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating150mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MX1
- Pin Count6
- Output Voltage50V
- Max Output Current150mA
- Number of Elements2
- PolarityNPN
- Number of Channels2
- Element ConfigurationDual
- Max Output Voltage50V
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product180MHz
- Transistor Type2 NPN (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency180MHz
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min120
- Continuous Collector Current150mA
- VCEsat-Max0.4 V
- Height1.1mm
- Length2.9mm
- Width1.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IMX1T110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IMX1T110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMX1T110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IMX1T110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMX1T110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMX1T110 More Descriptions
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 180MHz 300mW Surface Mount SMT6
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
ROHM IMX1T110 Dual NPN Bipolar Transistor, 0.15 A, 50 V, 6-Pin SMT | ROHM Semiconductor IMX1T110
Trans Gp Bjt Npn 50V 0.15A 6-Pin Smt T/R Rohs Compliant: Yes |Rohm IMX1T110
IMX1 Series 50 V 150 mA SMT Dual NPN General Purpose Transistor - SC-74
TRANSISTOR, DUAL NPN/NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SC-74; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 150mA; Gain Bandwidth ft Typ: 180MHz; Module Configuration: Dual; No. of Channels: 2Channels; No. of Transistors: 2; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Output Current Max: 150mA; Output Voltage Max: 50V; Transition Frequency ft: 180MHz
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
ROHM IMX1T110 Dual NPN Bipolar Transistor, 0.15 A, 50 V, 6-Pin SMT | ROHM Semiconductor IMX1T110
Trans Gp Bjt Npn 50V 0.15A 6-Pin Smt T/R Rohs Compliant: Yes |Rohm IMX1T110
IMX1 Series 50 V 150 mA SMT Dual NPN General Purpose Transistor - SC-74
TRANSISTOR, DUAL NPN/NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SC-74; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 150mA; Gain Bandwidth ft Typ: 180MHz; Module Configuration: Dual; No. of Channels: 2Channels; No. of Transistors: 2; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Output Current Max: 150mA; Output Voltage Max: 50V; Transition Frequency ft: 180MHz
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