Rohm Semiconductor IMN10T108

Name: IMN10T108
Brand: Rohm Semiconductor
SKU: 3812431-IMN10T108
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IMN10T108

Manufacturer:: Rohm Semiconductor

Ventron No:: 3812431-IMN10T108

Description:: DIODE ARRAY GP 80V 100MA 6SMD

ECAD Model:

Datasheet:: IMN10T108

Specifications

Rohm Semiconductor IMN10T108 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMN10T108.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Number of Pins
6
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
Tolerance
1%
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated
50V
HTS Code
8541.10.00.70
Capacitance
3.8pF
Subcategory
Other Diodes
Voltage - Rated DC
80V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
MN10
Pin Count
6
Case Code (Metric)
1005
Case Code (Imperial)
0402
Number of Elements
3
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
100nA @ 70V
Power Dissipation
300mW
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Forward Current
100mA
Operating Temperature - Junction
150°C Max
Max Surge Current
4A
Output Current-Max
0.1A
Forward Voltage
1.2V
Reverse Recovery Time
4 ns
Peak Reverse Current
100nA
Max Repetitive Reverse Voltage (Vrrm)
80V
Peak Non-Repetitive Surge Current
4A
Diode Configuration
3 Independent
Max Forward Surge Current (Ifsm)
300mA
Recovery Time
4 ns
Reverse Test Voltage
70V
Height
1.1mm
Length
990.6μm
Width
508μm
Thickness
558.8μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IMN10T108 Overview
When the forward voltage is set to 1.2V, this device will operate.Array is capable of supporting a maximum output voltage of 0.1A.Monarrayoring the surge current and preventing array from exceeding 4A should be the rule.When the forward voltage is set to 100mA, this device will operate.A current of 100mA can be drawn from the part.Approximately 3.8pF farads of capacitance are found in this device.Devices like this one are powered with a reverse voltage peak of 100nA.This electronic or electrical device creates 300mW of heat (energy loss) as a derivative of its primary action.This electronic or electrical device produces the maximum amount of 300mW heat (energy loss or waste).

IMN10T108 Features
1.2V forward voltage
a maximum output voltage of 0.1A
3.8pF farads
a peak voltage of 100nA
a reverse voltage peak of 100nA

IMN10T108 Applications
There are a lot of ROHM Semiconductor
IMN10T108 applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

IMN10T108 More Descriptions

Rectifier Diode, 3 Element, 0.1A, 80V V(RRM), Silicon
Rectifier Diode Switching 80V 0.3A 4ns 6-Pin SMD T/R
DIODE, 3 ARRAY, SC-74; Diode Configuration: Triple Isolated; Repetitive Reverse Voltage Vrrm Max: 80V; Forward Current If(AV): 100mA; Forward Voltage VF Max: 1.2V; Reverse Recovery Time trr Max: 4ns; Forward Surge Current Ifsm Max: 300mA; Operating Temperature Max: 150°C; Diode Case Style: SOT-457; No. of Pins: 6Pins; Product Range: IMN10 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2018); Current If @ Vf: 100mA; Diode Type: Switching; Junction Temperature Tj Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 300mW; Power Dissipation Ptot Max: 300mW; Termination Type: Surface Mount Device

Certification