IMD2AT108

Rohm Semiconductor IMD2AT108

Part Number:
IMD2AT108
Manufacturer:
Rohm Semiconductor
Ventron No:
2844619-IMD2AT108
Description:
TRANS NPN/PNP PREBIAS 0.3W SMT6
ECAD Model:
Datasheet:
IMD2AT108

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Specifications
Rohm Semiconductor IMD2AT108 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMD2AT108.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • HTS Code
    8541.21.00.75
  • Subcategory
    BIP General Purpose Small Signals
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    300mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    30mA
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *MD2
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    250MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    250MHz
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    56
  • Resistor - Base (R1)
    22k Ω
  • Continuous Collector Current
    30mA
  • Resistor - Emitter Base (R2)
    22k Ω
  • VCEsat-Max
    0.3 V
  • Height
    1.2mm
  • Length
    3mm
  • Width
    1.8mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IMD2AT108 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet IMD2AT108 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMD2AT108. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMD2AT108 More Descriptions
IMD2A Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-74
NPN PNP, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor)
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin SMT T/R
Transistor Dual Sc-74 Pnp/Npn; Digital Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:22Kohm; Rohs Compliant: Yes |Rohm IMD2AT108
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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