Intersil HIP2120FRTBZ-T
- Part Number:
- HIP2120FRTBZ-T
- Manufacturer:
- Intersil
- Ventron No:
- 3737265-HIP2120FRTBZ-T
- Description:
- IC HALF BRIDGE FET DRIVER 9TDFN
- Datasheet:
- HIP212xFRTxZ(-T)
Intersil HIP2120FRTBZ-T technical specifications, attributes, parameters and parts with similar specifications to Intersil HIP2120FRTBZ-T.
- Mounting TypeSurface Mount
- Package / Case9-WDFN Exposed Pad
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Voltage - Supply8V~14V
- Base Part NumberHIP2120
- Input TypeInverting
- Rise / Fall Time (Typ)10ns 10ns
- Channel TypeSynchronous
- Number of Drivers2
- Driven ConfigurationHalf-Bridge
- Gate TypeN-Channel MOSFET
- Current - Peak Output (Source, Sink)2A 2A
- Logic Voltage - VIL, VIH3.7V 7.93V
- High Side Voltage - Max (Bootstrap)114V
- RoHS StatusROHS3 Compliant
HIP2120FRTBZ-T Overview
The package or case for this electronic component is a 9-WDFN exposed pad, which provides protection and stability for the internal circuitry. It has a moisture sensitivity level (MSL) of 2, meaning it can withstand moderate levels of moisture for up to 1 year. The rise and fall time of this component is 10ns 10ns, indicating a fast response time. It is a synchronous channel type, meaning the input and output signals are synchronized. The driven configuration is a half-bridge, which allows for efficient power conversion. The gate type is N-Channel MOSFET, which is known for its high switching speed. The current peak output for both source and sink is 2A 2A, providing a strong and stable output. The logic voltage for this component ranges from 3.7V to 7.93V, ensuring compatibility with a variety of systems. The high side voltage can reach a maximum of 114V, making it suitable for high voltage applications. Lastly, it is important to note that this component is ROHS3 compliant, meeting the standards for environmental safety.
HIP2120FRTBZ-T Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2120FRTBZ-T Applications
There are a lot of Renesas Electronics America Inc. HIP2120FRTBZ-T gate drivers applications.
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
3-Phase Motor Inverter Driver
Uninterruptible Power Supplies (UPS)
Telecom switch mode power supplies
DC-DC Converters
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Portable Media Players
Commercial air-conditioning (CAC)
Isolated Gate Driver Supplies
Isolated Supplies for controller area network (CAN),
The package or case for this electronic component is a 9-WDFN exposed pad, which provides protection and stability for the internal circuitry. It has a moisture sensitivity level (MSL) of 2, meaning it can withstand moderate levels of moisture for up to 1 year. The rise and fall time of this component is 10ns 10ns, indicating a fast response time. It is a synchronous channel type, meaning the input and output signals are synchronized. The driven configuration is a half-bridge, which allows for efficient power conversion. The gate type is N-Channel MOSFET, which is known for its high switching speed. The current peak output for both source and sink is 2A 2A, providing a strong and stable output. The logic voltage for this component ranges from 3.7V to 7.93V, ensuring compatibility with a variety of systems. The high side voltage can reach a maximum of 114V, making it suitable for high voltage applications. Lastly, it is important to note that this component is ROHS3 compliant, meeting the standards for environmental safety.
HIP2120FRTBZ-T Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V
HIP2120FRTBZ-T Applications
There are a lot of Renesas Electronics America Inc. HIP2120FRTBZ-T gate drivers applications.
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
3-Phase Motor Inverter Driver
Uninterruptible Power Supplies (UPS)
Telecom switch mode power supplies
DC-DC Converters
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Portable Media Players
Commercial air-conditioning (CAC)
Isolated Gate Driver Supplies
Isolated Supplies for controller area network (CAN),
HIP2120FRTBZ-T More Descriptions
100V, 2A Peak, High Frequency Half-Bridge Drivers with Adjustable Dead Time Control and PWM Input
MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 9-Pin TDFN T/R
Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
IC HALF BRIDGE FET DRIVER 9TDFN
MOSFET DRVR 2A 2-OUT Hi/Lo Side Half Brdg Non-Inv 9-Pin TDFN T/R
Gate Drivers 100V 2A PEAK HALF BRDG DRV W/DELAY TMR
IC HALF BRIDGE FET DRIVER 9TDFN
The three parts on the right have similar specifications to HIP2120FRTBZ-T.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Voltage - SupplyBase Part NumberInput TypeRise / Fall Time (Typ)Channel TypeNumber of DriversDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)RoHS StatusSurface MountJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Pin CountQualification StatusTurn On TimeOutput Peak Current Limit-NomHigh Side DriverTurn Off TimeHeight Seated (Max)LengthWidthSupplier Device PackageFactory Lead TimeECCN CodeView Compare
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HIP2120FRTBZ-TSurface Mount9-WDFN Exposed Pad-55°C~150°C TJTape & Reel (TR)Obsolete2 (1 Year)8V~14VHIP2120Inverting10ns 10nsSynchronous2Half-BridgeN-Channel MOSFET2A 2A3.7V 7.93V114VROHS3 Compliant-------------------------
-
Surface Mount12-VFDFN Exposed Pad-55°C~150°C TJTubeObsolete3 (168 Hours)9V~14V-Non-Inverting10ns 10nsIndependent2Half-BridgeN-Channel MOSFET2A 2A4V 7V114VROHS3 CompliantYESe3yes12MATTE TINDUALNO LEAD260112V0.5mm3012COMMERCIAL0.045 µs2AYES0.045 µs0.9mm4mm4mm---
-
Surface Mount10-WDFN Exposed Pad-55°C~150°C TJTubeObsolete2 (1 Year)8V~14V-Inverting10ns 10nsSynchronous2Half-BridgeN-Channel MOSFET2A 2A1.4V 2.2V114VROHS3 Compliant---------------------10-TDFN (4x4)--
-
Surface Mount12-VFDFN Exposed Pad-55°C~150°C TJTubeActive3 (168 Hours)9V~14VHIP2101Non-Inverting10ns 10nsIndependent2Half-BridgeN-Channel MOSFET2A 2A0.8V 2.2V114VROHS3 CompliantYESe3-12Matte Tin (Sn) - annealedDUALNO LEADNOT SPECIFIED112V0.5mmNOT SPECIFIED12-0.056 µs-YES0.056 µs1mm4mm4mm-10 WeeksEAR99
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