Diodes Incorporated FZT655TA

FZT655TA Overview
This device has a DC current gain of 50 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 180mV.A VCE saturation (Max) of 500mV @ 200mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 30MHz.A breakdown input voltage of 150V volts can be used.A maximum collector current of 1A volts is possible.

FZT655TA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 30MHz


FZT655TA Applications
There are a lot of Diodes Incorporated
FZT655TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting