GeneSiC Semiconductor FR12JR05

Name: FR12JR05
Brand: GeneSiC Semiconductor
SKU: 2430177-FR12JR05
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FR12JR05

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2430177-FR12JR05

Description:: DIODE GEN PURP REV 600V 12A DO4

ECAD Model:

Datasheet:: FR12JR05

Specifications

GeneSiC Semiconductor FR12JR05 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor FR12JR05.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
10 Weeks
Mount
Chassis, Stud, Through Hole
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AA, DO-4, Stud
Diode Element Material
SILICON
Packaging
Bulk
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
Termination
Solder
Max Operating Temperature
75°C
Min Operating Temperature
0°C
Pitch
3.96mm
Terminal Position
UPPER
Orientation
Right Angle
JESD-30 Code
O-MUPM-D1
Number of Contacts
4
Number of Elements
1
Contact Resistance
6mOhm
Configuration
SINGLE
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard, Reverse Polarity
Current - Reverse Leakage @ Vr
25μA @ 100V
Voltage - Forward (Vf) (Max) @ If
800mV @ 12A
Case Connection
ANODE
Forward Current
12A
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
180A
Max Reverse Voltage (DC)
600V
Average Rectified Current
12A
Number of Phases
1
Reverse Recovery Time
500 ns
Peak Reverse Current
25μA
Max Repetitive Reverse Voltage (Vrrm)
600V
Reverse Voltage
600V
Recovery Time
500 ns
Natural Thermal Resistance
2 °C/W
RoHS Status
RoHS Compliant

Description

FR12JR05 Overview
An appropriate reverse voltage is 600V.Devices with this rating have an average rectified current of 12A volts.12A is the maximum value of forward current.As an object or material resists a heat flow, thermal resistance is its ability to measure the temperature difference across it. The natural thermal resistance of an object or material is 2 °C/W.There can be no surge current above 180A.Using the data chart, the peak reverse is 25μA in the datasheets.

FR12JR05 Features
an average rectified current of 12A volts
the peak reverse is 25μA

FR12JR05 Applications
There are a lot of GeneSiC Semiconductor
FR12JR05 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

FR12JR05 More Descriptions

600V 12A DO-4 Silicon Stud Rectifier - Fast Recovery (Reverse Configuration)
DIODE GEN PURP REV 600V 12A DO4
Rectifier, Fast, Single, 12A, 600V, Do-203Aa; Diode Module Configuration:single; Forward Current If(Av):12A; Forward Voltage Vf Max:1.4V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:600V

Product Comparison

The three parts on the right have similar specifications to FR12JR05.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

Max Operating Temperature

Min Operating Temperature

Pitch

Terminal Position

Orientation

JESD-30 Code

Number of Contacts

Number of Elements

Contact Resistance

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Reverse Voltage

Recovery Time

Natural Thermal Resistance

RoHS Status

ECCN Code

HTS Code

Terminal Form

Operating Temperature (Max)

View Compare
FR12JR05

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

10 Weeks

Chassis, Stud, Through Hole

Chassis, Stud Mount

DO-203AA, DO-4, Stud

SILICON

Bulk

yes

Active

1 (Unlimited)

1

Solder

75°C

0°C

3.96mm

UPPER

Right Angle

O-MUPM-D1

4

1

6mOhm

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Standard, Reverse Polarity

25μA @ 100V

800mV @ 12A

ANODE

12A

-65°C~150°C

180A

600V

12A

1

500 ns

25μA

600V

600V

500 ns

2 °C/W

RoHS Compliant

-

-

-

-

-
FR12B05

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

10 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

SILICON

Bulk

yes

Active

1 (Unlimited)

1

-

-

-

-

UPPER

-

O-MUPM-D1

-

1

-

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Standard

25μA @ 100V

800mV @ 12A

CATHODE

12A

-65°C~150°C

180A

100V

12A

1

500 ns

25μA

100V

100V

500 ns

2 °C/W

RoHS Compliant

EAR99

8541.10.00.80

SOLDER LUG

150°C

FR12JR05 vs FR12B05
FR12G02

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

10 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

SILICON

Bulk

yes

Active

1 (Unlimited)

1

-

-

-

-

UPPER

-

O-MUPM-D1

-

1

-

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Standard

25μA @ 100V

800mV @ 12A

CATHODE

12A

-65°C~150°C

180A

400V

12A

1

200 ns

25μA

400V

400V

200 ns

2.5 °C/W

RoHS Compliant

-

-

SOLDER LUG

150°C

FR12JR05 vs FR12G02
FR12J02

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

10 Weeks

Chassis, Stud, Through Hole

Chassis, Stud Mount

DO-203AA, DO-4, Stud

SILICON

Bulk

yes

Active

1 (Unlimited)

1

Solder

75°C

0°C

3.96mm

UPPER

Straight

O-MUPM-D1

7

1

-

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Standard

25μA @ 100V

800mV @ 12A

CATHODE

12A

-65°C~150°C

180A

600V

12A

1

250 ns

25μA

600V

600V

250 ns

2.5 °C/W

RoHS Compliant

EAR99

8541.10.00.80

-

-

FR12JR05 vs FR12J02