GeneSiC Semiconductor FR12BR02
- Part Number:
- FR12BR02
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 3812695-FR12BR02
- Description:
- DIODE GEN PURP REV 100V 12A DO4
- Datasheet:
- FR12BR02
GeneSiC Semiconductor FR12BR02 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor FR12BR02.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time10 Weeks
- MountChassis, Stud
- Mounting TypeChassis, Stud Mount
- Package / CaseDO-203AA, DO-4, Stud
- Diode Element MaterialSILICON
- PackagingBulk
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- ECCN CodeEAR99
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormSOLDER LUG
- JESD-30 CodeO-MUPM-D1
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard, Reverse Polarity
- Current - Reverse Leakage @ Vr25μA @ 100V
- Voltage - Forward (Vf) (Max) @ If800mV @ 12A
- Case ConnectionANODE
- Forward Current12A
- Operating Temperature - Junction-65°C~150°C
- Max Surge Current180A
- Max Reverse Voltage (DC)100V
- Average Rectified Current12A
- Number of Phases1
- Reverse Recovery Time200 ns
- Peak Reverse Current25μA
- Max Repetitive Reverse Voltage (Vrrm)100V
- Reverse Voltage100V
- Recovery Time200 ns
- Natural Thermal Resistance2.5 °C/W
- RoHS StatusRoHS Compliant
FR12BR02 Overview
An appropriate reverse voltage is 100V.Devices with this rating have an average rectified current of 12A volts.12A is the maximum value of forward current.As an object or material resists a heat flow, thermal resistance is its ability to measure the temperature difference across it. The natural thermal resistance of an object or material is 2.5 °C/W.There can be no surge current above 180A.Using the data chart, the peak reverse is 25μA in the datasheets.
FR12BR02 Features
an average rectified current of 12A volts
the peak reverse is 25μA
FR12BR02 Applications
There are a lot of GeneSiC Semiconductor
FR12BR02 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
An appropriate reverse voltage is 100V.Devices with this rating have an average rectified current of 12A volts.12A is the maximum value of forward current.As an object or material resists a heat flow, thermal resistance is its ability to measure the temperature difference across it. The natural thermal resistance of an object or material is 2.5 °C/W.There can be no surge current above 180A.Using the data chart, the peak reverse is 25μA in the datasheets.
FR12BR02 Features
an average rectified current of 12A volts
the peak reverse is 25μA
FR12BR02 Applications
There are a lot of GeneSiC Semiconductor
FR12BR02 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
FR12BR02 More Descriptions
100V 12A DO-4 Silicon Stud Rectifier - Fast Recovery (Reverse Configuration)
DIODE GEN PURP REV 100V 12A DO4
RECTIFIER, FAST, SINGLE, 12A, 100V, DO-203AA; Diode Module Configuration:Single; Forward Current If(AV):12A; Forward Voltage VF Max:1.4V; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:100V
DIODE GEN PURP REV 100V 12A DO4
RECTIFIER, FAST, SINGLE, 12A, 100V, DO-203AA; Diode Module Configuration:Single; Forward Current If(AV):12A; Forward Voltage VF Max:1.4V; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:100V
The three parts on the right have similar specifications to FR12BR02.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTerminal PositionTerminal FormJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentOperating Temperature - JunctionMax Surge CurrentMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesReverse Recovery TimePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Reverse VoltageRecovery TimeNatural Thermal ResistanceRoHS StatusVoltage - DC Reverse (Vr) (Max)TerminationMax Operating TemperatureMin Operating TemperaturePitchOrientationNumber of ContactsContact ResistanceView Compare
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FR12BR02PRODUCTION (Last Updated: 5 months ago)10 WeeksChassis, StudChassis, Stud MountDO-203AA, DO-4, StudSILICONBulkyesActive1 (Unlimited)1EAR998541.10.00.80UPPERSOLDER LUGO-MUPM-D1150°C1SINGLEFast Recovery =< 500ns, > 200mA (Io)Standard, Reverse Polarity25μA @ 100V800mV @ 12AANODE12A-65°C~150°C180A100V12A1200 ns25μA100V100V200 ns2.5 °C/WRoHS Compliant---------
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PRODUCTION (Last Updated: 5 months ago)10 WeeksChassis, StudChassis, Stud MountDO-203AA, DO-4, StudSILICONBulkyesActive1 (Unlimited)1EAR998541.10.00.80UPPERSOLDER LUGO-MUPM-D1150°C1SINGLEFast Recovery =< 500ns, > 200mA (Io)Standard, Reverse Polarity25μA @ 100V1.4V @ 12AANODE12A-65°C~150°C180A1kV12A1500 ns25μA1kV1kV500 ns2 °C/WRoHS Compliant1000V-------
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PRODUCTION (Last Updated: 5 months ago)10 WeeksChassis, Stud, Through HoleChassis, Stud MountDO-203AA, DO-4, StudSILICONBulkyesActive1 (Unlimited)1--UPPER-O-MUPM-D1-1SINGLEFast Recovery =< 500ns, > 200mA (Io)Standard, Reverse Polarity25μA @ 100V800mV @ 12AANODE12A-65°C~150°C180A600V12A1500 ns25μA600V600V500 ns2 °C/WRoHS Compliant-Solder75°C0°C3.96mmRight Angle46mOhm
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PRODUCTION (Last Updated: 5 months ago)10 WeeksChassis, StudChassis, Stud MountDO-203AA, DO-4, StudSILICONBulkyesActive1 (Unlimited)1EAR998541.10.00.80UPPERSOLDER LUGO-MUPM-D1150°C1SINGLEFast Recovery =< 500ns, > 200mA (Io)Standard, Reverse Polarity25μA @ 100V800mV @ 12AANODE12A-65°C~150°C180A100V12A1500 ns25μA100V100V500 ns2 °C/WRoHS Compliant--------
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