Fairchild/ON Semiconductor FDD5N60NZTM
- Part Number:
- FDD5N60NZTM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554147-FDD5N60NZTM
- Description:
- MOSFET N-CH 600V DPAK-3
- Datasheet:
- FDD5N60NZTM
Fairchild/ON Semiconductor FDD5N60NZTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD5N60NZTM.
- Lifecycle StatusACTIVE (Last Updated: 13 hours ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesUniFET-II™
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance2Ohm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max83W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation83W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2 Ω @ 2A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Rise Time20ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)4A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)25V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage600V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDD5N60NZTM Description
The FDD5N60NZTM from the MOSFET family is a high-voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET family features the lowest on-state resistance of any planar MOSFET family, as well as better switching performance and avalanche energy strength. UniFET II MOSFETs can also survive over 2kV HBM surge stress thanks to an inbuilt gate-source ESD diode. According to the FDD5N60NZTM datasheet, it is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballast applications.
FDD5N60NZTM Features
RoHS compliant
Low Crss ( Typ. 5pF)
100% avalanche tested
Improved dv/dt capability
ESD improved capability
Low gate charge ( Typ. 10nC)
RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2.0A
FDD5N60NZTM Applications
Lighting
LCD/LED/PDP TV
Uninterruptible Power Supply
The FDD5N60NZTM from the MOSFET family is a high-voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET family features the lowest on-state resistance of any planar MOSFET family, as well as better switching performance and avalanche energy strength. UniFET II MOSFETs can also survive over 2kV HBM surge stress thanks to an inbuilt gate-source ESD diode. According to the FDD5N60NZTM datasheet, it is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballast applications.
FDD5N60NZTM Features
RoHS compliant
Low Crss ( Typ. 5pF)
100% avalanche tested
Improved dv/dt capability
ESD improved capability
Low gate charge ( Typ. 10nC)
RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2.0A
FDD5N60NZTM Applications
Lighting
LCD/LED/PDP TV
Uninterruptible Power Supply
FDD5N60NZTM More Descriptions
N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK
FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II Mosfet - D2PAK-3
UNIFET2 600V N-CHANNEL MOSFET, DPAK - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II Mosfet - D2PAK-3
UNIFET2 600V N-CHANNEL MOSFET, DPAK - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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