FDD5N60NZTM

Fairchild/ON Semiconductor FDD5N60NZTM

Part Number:
FDD5N60NZTM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3554147-FDD5N60NZTM
Description:
MOSFET N-CH 600V DPAK-3
ECAD Model:
Datasheet:
FDD5N60NZTM

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Specifications
Fairchild/ON Semiconductor FDD5N60NZTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD5N60NZTM.
  • Lifecycle Status
    ACTIVE (Last Updated: 13 hours ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    UniFET-II™
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    2Ohm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    83W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    83W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2 Ω @ 2A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    4A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    25V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    600V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDD5N60NZTM Description
The FDD5N60NZTM from the MOSFET family is a high-voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET family features the lowest on-state resistance of any planar MOSFET family, as well as better switching performance and avalanche energy strength. UniFET II MOSFETs can also survive over 2kV HBM surge stress thanks to an inbuilt gate-source ESD diode. According to the FDD5N60NZTM datasheet, it is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballast applications.

FDD5N60NZTM Features
RoHS compliant
Low Crss ( Typ. 5pF)
100% avalanche tested
Improved dv/dt capability
ESD improved capability
Low gate charge ( Typ. 10nC)
RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2.0A

FDD5N60NZTM Applications
Lighting
LCD/LED/PDP TV
Uninterruptible Power Supply
FDD5N60NZTM More Descriptions
N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK
FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II™ Mosfet - D2PAK-3
UNIFET2 600V N-CHANNEL MOSFET, DPAK - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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