EMF8T2R

Rohm Semiconductor EMF8T2R

Part Number:
EMF8T2R
Manufacturer:
Rohm Semiconductor
Ventron No:
2844629-EMF8T2R
Description:
TRANS NPN PREBIAS/NPN 0.15W EMT6
ECAD Model:
Datasheet:
EMF8

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Specifications
Rohm Semiconductor EMF8T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMF8T2R.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN COPPER
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • HTS Code
    8541.21.00.75
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    150mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Transistor Type
    1 NPN Pre-Biased, 1 NPN
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    68 @ 5mA 5V / 270 @ 10mA 2V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
  • Collector Emitter Breakdown Voltage
    12V
  • Voltage - Collector Emitter Breakdown (Max)
    50V 12V
  • Current - Collector (Ic) (Max)
    100mA 500mA
  • Transition Frequency
    250MHz
  • Frequency - Transition
    250MHz 320MHz
  • hFE Min
    270
  • Resistor - Base (R1)
    47k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
EMF8T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMF8T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMF8T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMF8T2R More Descriptions
Trans Digital BJT NPN 12V 500mA/100mA 6-Pin EMT T/R
TRANSISTOR NPN DIGITAL, SMD; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 12V; Transistor Case Style: EMT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-
TRANSISTOR NPN DIGITAL, SMD; Transistor polarity:RET-NPN PNP; Transistors, No. of:2; Termination Type:SMD; Case style:EMT; Channels, No. of:2; Current, output max:0.1A; Pins, No. of:6; Voltage, output max:12V RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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