Rohm Semiconductor EMD22T2R

Name: EMD22T2R
Brand: Rohm Semiconductor
SKU: 2844348-EMD22T2R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: EMD22T2R

Manufacturer:: Rohm Semiconductor

Ventron No:: 2844348-EMD22T2R

Description:: TRANS NPN/PNP PREBIAS 0.15W EMT6

ECAD Model:

Datasheet:: EMD22T2R

Specifications

Rohm Semiconductor EMD22T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMD22T2R.

Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 10
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
150mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
*MD22
Pin Count
6
Max Output Current
100mA
Operating Supply Voltage
50V
Number of Elements
2
Polarity
NPN, PNP
Element Configuration
Dual
Power Dissipation
150mW
Transistor Application
SWITCHING
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 250μA, 2.5mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
hFE Min
80
Resistor - Base (R1)
4.7k Ω
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
47k Ω
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

EMD22T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMD22T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMD22T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

EMD22T2R More Descriptions

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Transistor DUAL DIGITAL; Digital Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1 (Unlimited) Tape & Reel (TR) SOT-563, SOT-666 1 NPN, 1 PNP - Pre-Biased (Dual) Surface Mount 4.7k Ω 80 @ 10mA 5V 300mV @ 250μA, 2.5mA 500nA TRANS NPN/PNP PREBIAS 0.15W EMT6
TRANSISTOR DUAL DIGITAL; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: EMT; No. of Pins: 6 Pin; Product Range: EMD22 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Pd: 150mW; Transistor Case Style: EMT; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

Certification