Diodes Incorporated DDA114EU-7-F

Name: DDA114EU-7-F
Brand: Diodes Incorporated
SKU: 3584858-DDA114EU-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DDA114EU-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 3584858-DDA114EU-7-F

Description:: TRANS 2PNP PREBIAS 0.2W SOT363

ECAD Model:

Datasheet:: DDA114EU-7-F

Specifications

Diodes Incorporated DDA114EU-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DDA114EU-7-F.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
-50V
Max Power Dissipation
200mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
-100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DDA114
Pin Count
6
Qualification Status
Not Qualified
Number of Elements
2
Polarity
PNP
Element Configuration
Dual
Transistor Type
2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
50V
Frequency - Transition
250MHz
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Resistor - Base (R1)
10k Ω
Continuous Collector Current
-100mA
Resistor - Emitter Base (R2)
10k Ω
Height
1mm
Length
2.2mm
Width
1.35mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DDA114EU-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DDA114EU-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DDA114EU-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DDA114EU-7-F More Descriptions

DDA114EU Series 50 V 100 mA PNP Small Signal Dual SMT Transistor - SOT-363
Trans Digital BJT PNP 50V 100mA 200mW 6-Pin SOT-363 T/R
PNP Biased Signal Dual Transistor SOT363
RF Transistor, 50V, 0.1A, SOT-363;
Dual PNP, 50V, 0.1A, SOT363, 200mWDiodes Inc SCT
Prebias Transistor Sot363 T&r 3K
TRANS 2PNP PREBIAS 0.2W SOT363

Product Comparison

The three parts on the right have similar specifications to DDA114EU-7-F.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Polarity

Element Configuration

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Emitter Base Voltage (VEBO)

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Height

Length

Width

RoHS Status

Lead Free

Radiation Hardening

Transistor Element Material

DC Current Gain-Min (hFE)

View Compare
DDA114EU-7-F

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

6.010099mg

Tape & Reel (TR)

2002

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

150°C

-55°C

BUILT IN BIAS RESISTOR RATIO IS 1

8541.21.00.75

BIP General Purpose Small Signal

-50V

200mW

GULL WING

260

not_compliant

-100mA

40

DDA114

6

Not Qualified

2

PNP

Dual

2 PNP - Pre-Biased (Dual)

300mV

100mA

30 @ 5mA 5V

500nA

300mV @ 500μA, 10mA

50V

250MHz

-300mV

50V

250MHz

-5V

100

10k Ω

-100mA

10k Ω

1mm

2.2mm

1.35mm

ROHS3 Compliant

Lead Free

-

-

-

-
DDA122LH-7

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

150°C

-55°C

BUILT IN BIAS RESISTOR RATIO 45.45

8541.21.00.75

BIP General Purpose Small Signal

-

150mW

FLAT

260

-

-

40

DDA122

6

-

2

PNP

Dual

2 PNP - Pre-Biased (Dual)

300mV

100mA

56 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

50V

200MHz

-

-

200MHz

-

56

220 Ω

100mA

10k Ω

600μm

1.6mm

1.2mm

ROHS3 Compliant

-

No

-

-

DDA114EU-7-F vs DDA122LH-7
DDA142TU-7-F

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

6.010099mg

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

150°C

-55°C

BUILT IN BIAS RESISTOR

8541.21.00.75

BIP General Purpose Small Signal

-

200mW

GULL WING

260

not_compliant

-

40

DDA142

6

Not Qualified

2

PNP

Dual

2 PNP - Pre-Biased (Dual)

40V

100mA

100 @ 1mA 5V

-

300mV @ 250μA, 5mA

50V

200MHz

-

-

200MHz

-

-

470 Ω

100mA

-

1mm

2.2mm

1.35mm

ROHS3 Compliant

-

-

-

-

DDA114EU-7-F vs DDA142TU-7-F
DDA114YU-7

Diodes Incorporated

-

Surface Mount

-

SOT-363

6

6.010099mg

Tape & Reel (TR)

2012

e0

-

Discontinued

1 (Unlimited)

6

EAR99

Tin/Lead (Sn85Pb15)

-

-

BUILT-IN BIAS RESISTOR RATIO IS 4.7

8541.21.00.75

-

-50V

200mW

GULL WING

235

not_compliant

-100mA

10

-

6

Not Qualified

2

PNP

Dual

-

300mV

100mA

-

-

-

50V

250MHz

-

50V

-

-5V

100

-

-100mA

-

1mm

2.2mm

1.35mm

ROHS3 Compliant

Contains Lead

-

SILICON

68

DDA114EU-7-F vs DDA114YU-7