Cypress Semiconductor Corp CY62148EV30LL-45BVI
- Part Number:
- CY62148EV30LL-45BVI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229626-CY62148EV30LL-45BVI
- Description:
- IC SRAM 4MBIT 45NS 36VFBGA
- Datasheet:
- CY62148EV30LL-45BVI
Cypress Semiconductor Corp CY62148EV30LL-45BVI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62148EV30LL-45BVI.
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case36-VFBGA
- Number of Pins36
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2003
- SeriesMoBL®
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations36
- Terminal FinishTIN LEAD
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)220
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Base Part NumberCY62148
- Pin Count36
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size4Mb 512K x 8
- Number of Ports1
- Nominal Supply Current20mA
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page45ns
- Address Bus Width19b
- Density4 Mb
- Standby Current-Max0.000007A
- Access Time (Max)45 ns
- I/O TypeCOMMON
- Sync/AsyncAsynchronous
- Word Size8b
- Length8mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
CY62148EV30LL-45BVI Overview
This component is manufactured by Cypress Semiconductor Corp and is classified as a Memory chip. It falls under the Memory category and is designed to be mounted on a surface. Its JESD-609 Code is e0 and it has a total of 36 terminations. The technology used in this chip is SRAM - Asynchronous and it has a parallel memory interface. The address bus width is 19b and it has a density of 4 Mb. It operates as an asynchronous chip and is not designed for radiation hardening. Additionally, it is not compliant with RoHS standards.
CY62148EV30LL-45BVI Features
Package / Case: 36-VFBGA
36 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
CY62148EV30LL-45BVI Applications
There are a lot of Cypress Semiconductor Corp CY62148EV30LL-45BVI Memory applications.
personal digital assistants
nonvolatile BIOS memory
DVD disk buffer
eDRAM
data buffer
printers
multimedia computers
mainframes
cell phones
Camcorders
This component is manufactured by Cypress Semiconductor Corp and is classified as a Memory chip. It falls under the Memory category and is designed to be mounted on a surface. Its JESD-609 Code is e0 and it has a total of 36 terminations. The technology used in this chip is SRAM - Asynchronous and it has a parallel memory interface. The address bus width is 19b and it has a density of 4 Mb. It operates as an asynchronous chip and is not designed for radiation hardening. Additionally, it is not compliant with RoHS standards.
CY62148EV30LL-45BVI Features
Package / Case: 36-VFBGA
36 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
CY62148EV30LL-45BVI Applications
There are a lot of Cypress Semiconductor Corp CY62148EV30LL-45BVI Memory applications.
personal digital assistants
nonvolatile BIOS memory
DVD disk buffer
eDRAM
data buffer
printers
multimedia computers
mainframes
cell phones
Camcorders
CY62148EV30LL-45BVI More Descriptions
CY62148EV30 Series 4 Mb (512 K x 8) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-36
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 45ns 36-Pin VF-BGA
IC SRAM 4MBIT PARALLEL 36VFBGA
SRAM 4Mb 3V 45ns 512K x 8 LP SRAM
STANDARD SRAM, 512KX8, 45NS, CMO
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 45ns 36-Pin VF-BGA
IC SRAM 4MBIT PARALLEL 36VFBGA
SRAM 4Mb 3V 45ns 512K x 8 LP SRAM
STANDARD SRAM, 512KX8, 45NS, CMO
The three parts on the right have similar specifications to CY62148EV30LL-45BVI.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchBase Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)I/O TypeSync/AsyncWord SizeLengthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageAccess TimeSurface MountReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOrganizationMemory DensityHeight Seated (Max)WidthView Compare
-
CY62148EV30LL-45BVI6 WeeksSurface MountSurface Mount36-VFBGA36-40°C~85°C TATray2003MoBL®e0noActive3 (168 Hours)36TIN LEADSRAM - Asynchronous2.2V~3.6VBOTTOM22013V0.75mmCY62148363V3.6V2.2V4Mb 512K x 8120mAVolatileSRAMParallel3-STATE845ns19b4 Mb0.000007A45 nsCOMMONAsynchronous8b8mmNoNon-RoHS CompliantContains Lead------------
-
--Surface Mount48-VFBGA--40°C~125°C TATray-MoBL®--Obsolete3 (168 Hours)--SRAM - Asynchronous2.7V~3.3V----------2Mb 128K x 16--VolatileSRAMParallel--70ns---------ROHS3 Compliant-48-VFBGA (6x8)70ns---------
-
--Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATube-MoBL®e4yesObsolete3 (168 Hours)32NICKEL PALLADIUM GOLDSRAM - Asynchronous2.2V~3.6VDUAL26013V1.27mm-32-3.6V2.2V2Mb 256K x 8--VolatileSRAMParallel-845ns---45 ns---20.95mm-ROHS3 Compliant---YESunknown20R-PDSO-G32COMMERCIAL256KX82097152 bit1.2mm10.16mm
-
--Surface Mount32-TFSOP (0.724, 18.40mm Width)--40°C~125°C TATube-MoBL®e3/e4yesObsolete3 (168 Hours)32MATTE TIN/NICKEL PALLADIUM GOLDSRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mm-32-5.5V4.5V1Mb 128K x 8--VolatileSRAMParallel-870ns---70 ns---18.4mm-ROHS3 Compliant---YESunknown20R-PDSO-G32COMMERCIAL128KX81048576 bit1.2mm8mm
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