Powerex Inc. CM200DU-12F

Name: CM200DU-12F
Brand: Powerex Inc.
SKU: 2854058-CM200DU-12F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CM200DU-12F

Manufacturer:: Powerex Inc.

Ventron No:: 2854058-CM200DU-12F

Description:: IGBT MOD DUAL 600V 200A F SER

ECAD Model:

Datasheet:: CM200DU-12F

Specifications

Powerex Inc. CM200DU-12F technical specifications, attributes, parameters and parts with similar specifications to Powerex Inc. CM200DU-12F.

Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Series
IGBTMOD™
Published
2000
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
590W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Current Rating
200A
Pin Count
7
Number of Elements
2
Configuration
Half Bridge
Power Dissipation
600W
Case Connection
ISOLATED
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
200A
Current - Collector Cutoff (Max)
1mA
Collector Emitter Breakdown Voltage
600V
Input Capacitance
54nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 200A
IGBT Type
Trench
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
54nF @ 10V
RoHS Status
RoHS Compliant

Description

CM200DU-12F Overview
This product is manufactured by Powerex Inc. and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet CM200DU-12F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of CM200DU-12F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

CM200DU-12F More Descriptions

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
Mitsubishi Power Transistor Module
Igbt Module, 600V, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:590W; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Mitsubishi Electric CM200DU-12F

Certification