Infineon Technologies BSS192PH6327FTSA1

Name: BSS192PH6327FTSA1
Brand: Infineon Technologies
SKU: 3070478-BSS192PH6327FTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS192PH6327FTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3070478-BSS192PH6327FTSA1

Description:: MOSFET P-CH 250V 0.19A SOT-89

ECAD Model:

Datasheet:: BSS192PH6327FTSA1

Specifications

Infineon Technologies BSS192PH6327FTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS192PH6327FTSA1.

Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
SIPMOS®
Published
2002
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Power Dissipation-Max
1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1W
Case Connection
DRAIN
Turn On Delay Time
4.7 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
12 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id
2V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds
104pF @ 25V
Current - Continuous Drain (Id) @ 25°C
190mA Ta
Gate Charge (Qg) (Max) @ Vgs
6.1nC @ 10V
Rise Time
5.2ns
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
2.8V 10V
Vgs (Max)
±20V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
72 ns
Continuous Drain Current (ID)
190mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
-250V
Drain to Source Breakdown Voltage
-250V
Feedback Cap-Max (Crss)
8 pF
Height
1.5mm
Length
4.5mm
Width
2.5mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS192PH6327FTSA1 Description
The BSS192PH6327FTSA1 is an OptiMOS? P-channel Power MOSFET. The Infineon BSS192PH6327FTSA1 consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics. The BSS192PH6327FTSA1 operates within ambient temperatures from -55 to 150°C and with power dissipation of 1W.

BSS192PH6327FTSA1 Features
Enhancement-mode
Avalanche rated
Small signal packages approved to AEC-Q101
Logic level
dV/dt Rated
Halogen-free, Green device

BSS192PH6327FTSA1 Applications
Power Management
Automotive
Motor Drive & Control
Consumer Electronics
Portable Devices
Computers & Computer Peripherals

BSS192PH6327FTSA1 More Descriptions

Trans MOSFET P-CH 250V 0.19A Automotive 4-Pin(3 Tab) SOT-89 T/R
Single P-Channel 250 V 12 Ohm 4.9 nC SIPMOS® Small Signal Mosfet - SOT-89
MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-190mA; Source Voltage Vds:-250V; On
MOSFET, P-CH, -250V, -0.19A, SOT-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -190mA; Drain Source Voltage Vds: -250V; On Resistance Rds(on): 7.7ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 190 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 50 / Rise Time ns = 5.2 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-89 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1

Product Comparison

The three parts on the right have similar specifications to BSS192PH6327FTSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Feedback Cap-Max (Crss)

Height

Length

Width

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Terminal Position

Reach Compliance Code

Current Rating

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Additional Feature

Voltage

Current

Transistor Application

View Compare
BSS192PH6327FTSA1

Infineon Technologies

10 Weeks

Surface Mount

Surface Mount

TO-243AA

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

SIPMOS®

2002

yes

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

FLAT

NOT SPECIFIED

NOT SPECIFIED

1

1W Ta

Single

ENHANCEMENT MODE

1W

DRAIN

4.7 ns

P-Channel

12 Ω @ 190mA, 10V

2V @ 130μA

104pF @ 25V

190mA Ta

6.1nC @ 10V

5.2ns

250V

2.8V 10V

±20V

50 ns

72 ns

190mA

20V

-250V

-250V

8 pF

1.5mm

4.5mm

2.5mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E6908

Infineon Technologies

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

360mW Ta

-

-

-

-

-

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

-

60V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS192PH6327FTSA1 vs BSS138N E6908
BSS119E6327

Infineon Technologies

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2000

-

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

GULL WING

-

-

1

360mW Ta

-

ENHANCEMENT MODE

-

-

-

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

5ns

-

4.5V 10V

±20V

-

-

170mA

-

-

-

6 pF

-

-

-

RoHS Compliant

Contains Lead

e3

MATTE TIN

8541.21.00.95

FET General Purpose Power

100V

DUAL

unknown

170mA

3

R-PDSO-G3

Not Qualified

SINGLE WITH BUILT-IN DIODE

0.17A

10Ohm

-

-

-

-

BSS192PH6327FTSA1 vs BSS119E6327
BSS131E6327

Infineon Technologies

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

1999

-

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

GULL WING

-

-

1

360mW Ta

-

ENHANCEMENT MODE

360mW

-

-

N-Channel

14 Ω @ 100mA, 10V

1.8V @ 56μA

77pF @ 25V

110mA Ta

3.1nC @ 10V

8ns

-

4.5V 10V

±20V

-

-

110mA

20V

-

-

5 pF

-

-

-

RoHS Compliant

Contains Lead

e3

MATTE TIN

-

FET General Purpose Power

240V

DUAL

unknown

100mA

3

-

Not Qualified

SINGLE WITH BUILT-IN DIODE

-

26Ohm

LOGIC LEVEL COMPATIBLE

240V

1A

SWITCHING

BSS192PH6327FTSA1 vs BSS131E6327