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BSS159NH6327XTSA2

Infineon Technologies BSS159NH6327XTSA2

Part Number:
BSS159NH6327XTSA2
Manufacturer:
Infineon Technologies
Ventron No:
3070503-BSS159NH6327XTSA2
Description:
MOSFET N-CH 60V 230MA SOT-23
ECAD Model:
Datasheet:
BSS159NH6327XTSA2

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Specifications
Infineon Technologies BSS159NH6327XTSA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS159NH6327XTSA2.
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SIPMOS®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    360mW Ta
  • Element Configuration
    Single
  • Power Dissipation
    360mW
  • Turn On Delay Time
    3.1 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3.5 Ω @ 160mA, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 26μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    39pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    230mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 5V
  • Rise Time
    2.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    0V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    9 ns
  • Continuous Drain Current (ID)
    230mA
  • Threshold Voltage
    -2.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    60V
  • Drain to Source Breakdown Voltage
    60V
  • Max Junction Temperature (Tj)
    150°C
  • FET Feature
    Depletion Mode
  • Feedback Cap-Max (Crss)
    5.9 pF
  • Height
    1.1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS159NH6327XTSA2 Description
BSS159NH6327XTSA2 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of BSS159NH6327XTSA2 is -55°C~150°C TJ and its maximum power dissipation is 360mW. BSS159NH6327XTSA2 has 3 pins and it is available in Tape & Reel (TR) packaging way.

BSS159NH6327XTSA2 Features
SIPMOS? N-channel small signal transistor
Depletion mode
dv/dot rated
Qualified according to AEC Q101

BSS159NH6327XTSA2 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
BSS159NH6327XTSA2 More Descriptions
Single N-Channel 60 V 3.5 Ohm 1.4 nC SIPMOS® Small Signal Mosfet - SOT-23
Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 60V, 0.23A, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:230Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSS159NH6327XTSA2
Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. | Summary of Features: Depletion mode; dv/dt rated; Available with V GS(th) indicator on the reel; Halogen free; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 230 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 9 / Rise Time ns = 2.9 / Turn-OFF Delay Time ns = 9 / Turn-ON Delay Time ns = 3.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360
Product Comparison
The three parts on the right have similar specifications to BSS159NH6327XTSA2.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    FET Feature
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    HTS Code
    Subcategory
    Voltage - Rated DC
    Reach Compliance Code
    Current Rating
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Lifecycle Status
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Transistor Application
    View Compare
  • BSS159NH6327XTSA2
    BSS159NH6327XTSA2
    Infineon Technologies
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SIPMOS®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    1
    360mW Ta
    Single
    360mW
    3.1 ns
    N-Channel
    3.5 Ω @ 160mA, 10V
    2.4V @ 26μA
    Halogen Free
    39pF @ 25V
    230mA Ta
    1.4nC @ 5V
    2.9ns
    0V 10V
    ±20V
    9 ns
    230mA
    -2.8V
    20V
    60V
    60V
    150°C
    Depletion Mode
    5.9 pF
    1.1mm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS138N E6908
    BSS138N E6908
    Infineon Technologies
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    SIPMOS®
    2007
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    360mW Ta
    -
    -
    -
    N-Channel
    3.5 Ω @ 230mA, 10V
    1.4V @ 250μA
    -
    41pF @ 25V
    230mA Ta
    1.4nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    BSS159NH6327XTSA2 vs BSS138N E6908
  • BSS119E6327
    BSS119E6327
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    SIPMOS®
    2000
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    -
    360mW Ta
    -
    -
    -
    N-Channel
    6 Ω @ 170mA, 10V
    2.3V @ 50μA
    -
    78pF @ 25V
    170mA Ta
    2.5nC @ 10V
    5ns
    4.5V 10V
    ±20V
    -
    170mA
    -
    -
    -
    -
    -
    -
    6 pF
    -
    -
    -
    -
    -
    RoHS Compliant
    Contains Lead
    -
    8541.21.00.95
    FET General Purpose Power
    100V
    unknown
    170mA
    R-PDSO-G3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    0.17A
    10Ohm
    -
    -
    -
    -
    -
    -
    -
    BSS159NH6327XTSA2 vs BSS119E6327
  • BSS123LT1
    BSS123LT1
    ON Semiconductor
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    -
    Cut Tape (CT)
    -
    2005
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    -
    -
    Single
    225mW
    -
    N-Channel
    6 Ω @ 100mA, 10V
    2.8V @ 1mA
    -
    20pF @ 25V
    170mA Ta
    -
    -
    -
    -
    40 ns
    170mA
    -
    20V
    -
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    FET General Purpose Power
    100V
    not_compliant
    170mA
    -
    Not Qualified
    -
    ENHANCEMENT MODE
    0.17A
    6Ohm
    LAST SHIPMENTS (Last Updated: 3 days ago)
    150°C
    -55°C
    225mW
    240
    30
    SWITCHING
    BSS159NH6327XTSA2 vs BSS123LT1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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