Infineon Technologies BFP640H6327XTSA1

Name: BFP640H6327XTSA1
Brand: Infineon Technologies
SKU: 2465544-BFP640H6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFP640H6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2465544-BFP640H6327XTSA1

Description:: TRANS RF NPN 4V 50MA SOT343

ECAD Model:

Datasheet:: BFP640H6327XTSA1

Specifications

Infineon Technologies BFP640H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFP640H6327XTSA1.

Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-82A, SOT-343
Number of Pins
4
Transistor Element Material
SILICON GERMANIUM
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW NOISE, HIGH RELIABILITY
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
40GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFP640
Number of Elements
1
Configuration
SINGLE
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 30mA 3V
Collector Emitter Breakdown Voltage
4V
Gain
12.5dB
Voltage - Collector Emitter Breakdown (Max)
4.5V
Transition Frequency
40000MHz
Max Breakdown Voltage
4.5V
Collector Base Voltage (VCBO)
13V
Emitter Base Voltage (VEBO)
1.2V
Collector-Base Capacitance-Max
0.2pF
Noise Figure (dB Typ @ f)
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BFP640H6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFP640H6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFP640H6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BFP640H6327XTSA1 More Descriptions

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN
BFP640 Series 4.5 V NPN Low Noise Germanium Bipolar RF Transistor - PG-SOT343-4
Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin(3 Tab) SOT-343 T/R
4.5V 200mW 50mA NPN - Bipolar Transistors - BJT ROHS
RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4V; Transition Frequency ft: 40GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 180hFE; RF Transistor Case
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 50 / Collector-Emitter Voltage (Vceo) V = 4.1 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 13 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 42 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
Summary of Features: High gain low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz; High maximum stable gain :Gms = 24 dB at 1.8 GHz; Gold metallization for extra high reliability; 70 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101
Transistor, RF SOT-343; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:4V; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to 150°C; No. of Pins:3; Associated Gain Ga:24dB; Continuous Collector Current Ic:50mA; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:30mA; Gain Bandwidth ft Min:30GHz; Gain Bandwidth ft Typ:36GHz; Hfe Min:100; No. of Transistors:1; Noise Figure Typ:0.65dB; Output @ Third Order Intercept Point IP3:26.5dB; Package / Case:SOT-343; Power @ 1dB Gain Compression, P1dB:13dBm; Power Dissipation Ptot Max:200mW; SMD Marking:R4s; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:SOT-343; Voltage Vcbo:13V

Certification