Infineon Technologies BFP420FH6327XTSA1

Name: BFP420FH6327XTSA1
Brand: Infineon Technologies
SKU: 2846150-BFP420FH6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFP420FH6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2846150-BFP420FH6327XTSA1

Description:: TRANS RF NPN 5.5V 35MA 4TSFP

ECAD Model:

Datasheet:: BFP420FH6327XTSA1

Specifications

Infineon Technologies BFP420FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFP420FH6327XTSA1.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-SMD, Flat Leads
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
160mW
Terminal Position
DUAL
Frequency
25GHz
Base Part Number
BFP420
Number of Elements
1
Configuration
SINGLE
Power Dissipation
210mW
Power - Max
160mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
4.5V
Max Collector Current
35mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA 4V
Collector Emitter Breakdown Voltage
5.5V
Gain
19.5dB
Transition Frequency
25000MHz
Max Breakdown Voltage
5.5V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
1.5V
Collector-Base Capacitance-Max
0.3pF
Noise Figure (dB Typ @ f)
1.1dB @ 1.8GHz
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BFP420FH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFP420FH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFP420FH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BFP420FH6327XTSA1 More Descriptions

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN
BFP420F Series 5.5 V 60 mA Low Noise Silicon Bipolar RF Transistor - TSFP-4-1
Trans RF BJT NPN 4.5V 0.06A 210mW Automotive 4-Pin TSFP T/R
RF TRANSISTOR, NPN, 4.5V, 25GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 25GHz; Power Dissipation Pd: 210mW; DC Collector Current: 60mA; DC Current Gain hFE: 60hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Low Noise Silicon Bipolar RF Transistor | Summary of Features: Low noise high gain silicon bipolar RF transistor; Based on Infineons reliable very high volume 25 GHz silicon bipolar technology; 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA; 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA; 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA; 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA; Popular in discrete oscillators; Thin, small, flat, Pb-free (RoHS compliant) and Hal-free; (green) package with visible leads | Target Applications: As Low Noise Amplifier (LNA) in; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB); Multimedia applications such as mobile/portable TV, CATV, FM Radio; ISM applications like RKE, AMR and Zigbee; As discrete active mixer in RF Frontends; As active device in discretes oscillators

Certification