NXP USA Inc. BF862,215

Name: BF862,215
Brand: NXP USA Inc.
SKU: 2474776-BF862,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BF862,215

Manufacturer:: NXP USA Inc.

Ventron No:: 2474776-BF862,215

Description:: JFET N-CH 20V 25MA SOT23

ECAD Model:

Datasheet:: BF862

Specifications

NXP USA Inc. BF862,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BF862,215.

Factory Lead Time
8 Weeks
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
1999
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
20V
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Current Rating (Amps)
25mA
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BF862
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Transistor Application
AMPLIFIER
Transistor Type
N-Channel JFET
JEDEC-95 Code
TO-236AB
Drain Current-Max (Abs) (ID)
0.04A
DS Breakdown Voltage-Min
20V
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.225W
RoHS Status
ROHS3 Compliant

Description

Description: The NXP Semiconductors BF862,215 is a JFET N-Channel transistor in a SOT23 package. It has a drain-source voltage of 20V and a drain current of 25mA.

Features:
- Low noise figure
- Low input capacitance
- High input impedance
- Low gate-source leakage current
- High gain
- Low power consumption

Applications:
- Amplifiers
- Switches
- Voltage regulators
- Signal processing
- RF applications
- Automotive applications

BF862,215 More Descriptions

BF862 Series 20 V 25 mA Surface Mount N-Channel Junction FET - TO-236AB
MOSFET Operating temperature: -55... 150 °C Housing type: SOT-23 Polarity: N Power dissipation: 300 mW
Trans JFET N-CH 20V Automotive 3-Pin TO-236AB T/R
RF FET, N CH, 20V, 25MA, 3-SOT-23; TRANS; Transistor Type:RF FET; Breakdown Voltage Vbr:-20V; Zero Gate
RF FET, N CHANNEL, 20V, 25MA, 3-SOT-23
Small Signal Field-Effect Transistor, 0.04A I(D), 20V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
BF862 - N-channel junction FET
Rf Jfet, N Channel, 20V, 25Ma, 3-Sot-23, Full Reel; Gate Source Breakdown Voltage Max:-20V; Zero Gate Voltage Drain Current Max:25Ma; Gate Source Cutoff Voltage Max:-1.2V; No. Of Pins:3 Pin; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Nxp BF862,215

Certification