STMicroelectronics BD911
- Part Number:
- BD911
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465490-BD911
- Description:
- TRANS NPN 100V 15A TO-220
- Datasheet:
- BD911
STMicroelectronics BD911 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD911.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight90.718474g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation90W
- Current Rating15A
- Frequency3MHz
- Base Part NumberBD911
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation90W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5A 4V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3V @ 2.5A, 10A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min15
- VCEsat-Max3 V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD911 Description
The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively.
BD911 Features STMicroelectronics PREFERRED SALESTYPES
BD911 Features STMicroelectronics PREFERRED SALESTYPES
BD911 More Descriptions
Transistor GP BJT NPN 100V 15A 3-Pin (3 Tab) TO-220 Tube
Transistor: NPN; bipolar; 100V; 15A; 90W; -65 150 deg.C; THT; TO220
BD911 Series 100 V 15 A Complementary Silicon NPN Power Transistor - TO-220
Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN General Purpose
Power Bipolar, NPN, 4V, 500mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):15; Package/Case:3-TO-220AB; Collector Current @ hfe:5A; DC Collector Current:15A; Leaded Process Compatible:Yes; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:40; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Application Code:GP; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:15A; Current Gain Hfe Max:250; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:15A; Current Ic hFE:500mA; Device Marking:BD911; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; Hfe Typ:40; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Voltage Vcbo:100V
Transistor: NPN; bipolar; 100V; 15A; 90W; -65 150 deg.C; THT; TO220
BD911 Series 100 V 15 A Complementary Silicon NPN Power Transistor - TO-220
Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN General Purpose
Power Bipolar, NPN, 4V, 500mA, TO-220, TubeSTMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):15; Package/Case:3-TO-220AB; Collector Current @ hfe:5A; DC Collector Current:15A; Leaded Process Compatible:Yes; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:40; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Application Code:GP; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:15A; Current Gain Hfe Max:250; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:15A; Current Ic hFE:500mA; Device Marking:BD911; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; Hfe Typ:40; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Voltage Vcbo:100V
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