BC856BDW1T1

ON Semiconductor BC856BDW1T1

Part Number:
BC856BDW1T1
Manufacturer:
ON Semiconductor
Ventron No:
3068268-BC856BDW1T1
Description:
TRANS 2PNP 65V 0.1A SOT363
ECAD Model:
Datasheet:
BC856,7,8(B,CDW1T1)

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Specifications
ON Semiconductor BC856BDW1T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC856BDW1T1.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -65V
  • Max Power Dissipation
    380mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -100mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    650mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    -650mV
  • Collector Base Voltage (VCBO)
    -80V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    220
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BC856BDW1T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet BC856BDW1T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BC856BDW1T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BC856BDW1T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
Dual PNP Bipolar Transistor
TRANS PNP 60V 0.8A TO-92
TRANS 2PNP 65V 0.1A SOT363
OEMs, CMs ONLY (NO BROKERS)
0.1A I(C) PNP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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