ON Semiconductor BC847CDW1T1G

Name: BC847CDW1T1G
Brand: ON Semiconductor
SKU: 2843848-BC847CDW1T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847CDW1T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2843848-BC847CDW1T1G

Description:: TRANS 2NPN 45V 0.1A SOT363

ECAD Model:

Datasheet:: BC847CDW1T1G

Specifications

ON Semiconductor BC847CDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847CDW1T1G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
380mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC847CD
Pin Count
6
Number of Elements
2
Polarity
NPN
Element Configuration
Dual
Power Dissipation
380mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Transistor Type
2 NPN (Dual)
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
420
Height
1.1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:

The BC847CDW1T1G is a 2 NPN bipolar transistor array in a SOT-363 package from ON Semiconductor. It has a collector-emitter voltage of 45V and a collector current of 0.1A.

Features:

• 2 NPN transistors in a single package
• Collector-emitter voltage of 45V
• Collector current of 0.1A
• Low collector-emitter saturation voltage
• Low noise
• High gain
• RoHS compliant

Applications:

The BC847CDW1T1G is suitable for a wide range of applications, including:
• Switching
• Amplification
• Signal processing
• Power management
• Automotive electronics
• Industrial control

BC847CDW1T1G More Descriptions

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ON Semi BC847CDW1T1G NPN Bipolar Transistor, 0.1 A, 45 V, 6-Pin SOT-363 | ON Semiconductor BC847CDW1T1G
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100 mA, 45 V Dual NPN Bipolar Junction Transistors
BIPOLAR TRANSISTOR, NPN, DUAL, 45V, SOT363
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Bipolar Transistor, Npn, Dual, 45V, Sot363; Transistor Polarity:dual Npn; Collector Emitter Voltage V(Br)Ceo:45V; Dc Collector Current:100Ma; Power Dissipation Pd:380Mw; Transistor Mounting:surface Mount; No. Of Pins:6Pins Rohs Compliant: Yes

Certification